BUK9K25-40EX

The BUK9K25-40EX transistor is a high-performance field-effect transistor (FET) array with a wide array of useful applications. It features an integrated channel-length modulation system, designed to minimize on-state resistance and maximize electrical properties. This device is primarily used for industrial power supply applications, as well as in LED lighting, telecommunications devices, and other electronic products. In addition, the BUK9K25-40EX offers enhanced ESD protection, making it ideal for use in high-altitude, climatically hostile environments.

Overview

The BUK9K25-40EX is a 40A discrete power FET with an integrated channel-length modulation system. This device uses two independent gate terminals to control the on-state resistance. On-state resistance is minimized and electrical properties such as turn-on delay, ringing time, and voltage losses are maximized.

The device is constructed using high-voltage MOSFET technology, which includes trench drain and floating raised body structure isolation. This ensures that the device is able to withstand higher withstand voltages (normal operating voltage range is up to 800V).

The BUK9K25-40EX offers a combination of excellent electrical and thermal stability along with a low power consumption. This makes the device ideal for use in systems that require high power out of a small package. Furthermore, it has a leakage current of just 20nA (at 25℃).

Application Field and Working Principle of BUK9K25-40EX

Due to its ability to provide 40A of continuous current and up to 800V of operating voltage, the BUK9K25-40EX is ideal for use in various industrial power supply applications, including motor control, bridge circuits for generating high voltages, and current-control loops. It is also used in LED lighting applications to maintain a stable current flow and reduce power losses. In addition, the BUK9K25-40EX can be used in telecommunications equipment, mobile phones, personal computers, and other electronic products.

The principle of working of the BUK9K25-40EX is based on the Field-Effect Transistor (FET) structure. It consists of a source terminal, drain terminal, and a continuous gate terminal. The gate terminal is responsible for controlling the on-state resistance. When a voltage signal is applied to the gate terminal, it creates a vertical electric field in the channel, which modulates the resistance between the source and the drain. The on-state resistance is then minimized, resulting in an improved turn-on delay, ringing time, and voltage losses.

Benefits

The BUK9K25-40EX provides several benefits over traditional transistors, such as:

• Enhanced ESD protection, making it suitable for hostile environments
• Improved turn-on delay and reduced ringing time
• Minimized voltage losses
• Low power consumption
• Can manage heavy currents

Conclusion

The BUK9K25-40EX transistor is a high-performance FET array with an integrated channel-length modulation system for improved electrical performance. It is suitable for use in industrial power supplies, LED lighting, telecommunications devices, and other electronic products. The device provides excellent ESD protection and low power consumption, making it an ideal choice for power supplies and LED lighting applications.