BUK9K35-60E,115 Allicdata Electronics
Allicdata Part #:

1727-7271-2-ND

Manufacturer Part#:

BUK9K35-60E,115

Price: $ 0.30
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET 2N-CH 60V 22A LFPAK56D
More Detail: Mosfet Array 2 N-Channel (Dual) 60V 22A 38W Surfac...
DataSheet: BUK9K35-60E,115 datasheetBUK9K35-60E,115 Datasheet/PDF
Quantity: 1000
1500 +: $ 0.27821
Stock 1000Can Ship Immediately
$ 0.3
Specifications
Series: Automotive, AEC-Q101, TrenchMOS™
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 22A
Rds On (Max) @ Id, Vgs: 32 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 14.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1081pF @ 25V
Power - Max: 38W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D
Description

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FETs (field-effect transistors) are a type of transistor which use an electric field to control the flow of current. MOSFETs (metal-oxide-semiconductor field-effect transistors) are a type of FET that is popular due to its high switching speed, low power consumption, and low noise level. BUK9K35-60E,115 is one of the most popular would included MOSFET arrays, which can provide better performance and simpler circuit connection.

BUK9K35-60E,115 are a type of vertical MOSFETs array with two independent N-channel enhancement mode MOSFETs. It is a dual-channel FET (DSFET) that has a gate-drain voltage of 30V, a drain-source voltage of 60V, continuous current (ID) of 2 x 115A, and equivalent on-resistance (RON) of 0.0666 and 0.06Ω. It also features temperature compensated noise and a low thermal resistance.

BUK9K35-60E,115 have wide applications in various fields due to its superior performance. It is widely used for automotive, industrial and consumer electronics, including switch mode power supplies, uninterruptible power supplies, server power supplies, led backlight driver, and automotive lighting systems.

The working principle of BUK9K35-60E,115 is similar to other MOSFETs, in that it uses an electric field to control the flow of current. When the gate voltage increases, more electrons are attracted to the gate and more electrons are emitted from the source than the drain, thus creating a current is allowed to flow. This process is then repeated when the gate voltage is decreased, thus resulting in the switching of the FET.

In conclusion, BUK9K35-60E,115 is one of the most popular MOSFET arrays, which can provide better performance and simpler circuit connection. It features a gate-drain voltage of 30V, a drain-source voltage of 60V, continuous current (ID) of 2 x 115A, and equivalent on-resistance (RON) of 0.0666 and 0.06Ω. It is widely used for automotive, industrial and consumer electronics, including switch mode power supplies. It works by using an electric field to control the flow of current.

The specific data is subject to PDF, and the above content is for reference

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