Allicdata Part #: | 1727-7275-2-ND |
Manufacturer Part#: |
BUK9K89-100E,115 |
Price: | $ 0.32 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET 2N-CH 100V 12.5A LFPAK56D |
More Detail: | Mosfet Array 2 N-Channel (Dual) 100V 12.5A 38W Sur... |
DataSheet: | BUK9K89-100E,115 Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.28192 |
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 12.5A |
Rds On (Max) @ Id, Vgs: | 85 mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id: | 2.1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 16.8nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 1108pF @ 25V |
Power - Max: | 38W |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-1205, 8-LFPAK56 |
Supplier Device Package: | LFPAK56D |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
MOSFETs are normally created using the three-terminal design, with the three terminals being the drain, gate, and source respectively. This kind of MOSFET works by creating a channel between the source and the drain when a voltage is applied to the gate. This channel is then used to conduct current between the source and the drain. The current can be regulated by changing the amount of voltage applied to the gate, thereby allowing greater control over the signal.
The BUK9K89-100E,115 is an example of a complementary MOSFET array, which means that it contains both a n-channel MOSFET and a p-channel MOSFET in the same package. This means that it can be used in applications which require both source and sink of currents, or to achieve signal buffering/amplification between signals with different polarities. It is also particularly versatile because it has a small package size, enabling its use in high power density applications.
The BUK9K89-100E,115 has a number of unique characteristics which make it well-suited for use in digital signal processing. Its low on-resistance makes it well-suited for processing high-frequency signals, as it can switch quickly without adding too much extra resistance. It also has low noise, which is important for digital signal processing, as any high-frequency noise can interfere with the desired signal. Additionally, it has a low gate-source capacitance which helps it to switch faster than other MOSFETs.
The BUK9K89-100E,115 is well-suited for many applications such as data conversion, including converters for digital-to-analog converters, analog-to-digital converters, video data converters, and radio converters. It is also commonly used in the automotive industry, as its small size allows it to be used in high power density applications. In addition, it is often used in industrial applications such as motor control, as its low on-resistance and low gate-source capacitance make it well-suited for motor speed control and switching.
In conclusion, the BUK9K89-100E,115 is a very versatile MOSFET array which can be used for a variety of applications. Its three-terminal design gives it greater control over current, making it well-suited for digital signal processing and data conversion. It also has low noise and low on-resistance, making it ideal for many automotive and industrial applications. With its low gate-source capacitance and small size, it is well-suited for high power density applications as well.
The BUK9K89-100E,115 therefore provides a versatile and reliable choice for a variety of MOSFET applications.
The specific data is subject to PDF, and the above content is for reference
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