BUK9Y3R0-40E/GFX Allicdata Electronics
Allicdata Part #:

BUK9Y3R0-40E/GFX-ND

Manufacturer Part#:

BUK9Y3R0-40E/GFX

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: MOSFET N-CH LFPAK
More Detail: Bipolar (BJT) Transistor
DataSheet: BUK9Y3R0-40E/GFX datasheetBUK9Y3R0-40E/GFX Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: *
Part Status: Obsolete
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Transistors are vital components in the electronics industry, playing an important role in powering and controlling electronic devices. The BUK9Y3R0-40E/GFX is a single bipolar junction transistor (BJT) and is a popular choice of transistor due to its low cost, low power consumption, small size, and strong performance. This article will discuss the application fields and working principle of the BUK9Y3R0-40E/GFX.

Application Fields

The BUK9Y3R0-40E/GFX is a commonly used transistor in a wide range of applications. It is used in amplifiers, analog voltage regulators, multiplexers and demultiplexers, DC-DC converters, audio amplifiers, and switching. Additionally, it can also be used in many power circuits and logic circuits because of its low power consumption, making it a powerful and cost-efficient solution for any design.

Working Principle

At the heart of the BUK9Y3R0-40E/GFX is an NPN transistor, which consists of three layers of semiconductor materials. These semiconductor layers are separated by a thin layer of insulation, which allows the transistor to control the current flowing between the collector and emitter. NPN transistors work by allowing the current to flow between the emitter and collector only when a positive voltage is applied to the base. When the base voltage is not present, the transistor is in a cutoff state, meaning the current will not flow between the emitter and collector.

When a positive voltage is applied to the base, electrons from the base are attracted to the collector, and holes from the collector are attracted to the emitter. This allows for current to flow between the collector and emitter, as the electrons and holes can now move freely between the two. The amount of current that can pass through the transistor is controlled by the amount of voltage that is supplied to the base. This is known as the transistor’s gain, and is determined by the ratio of the collector current to the base current.

Overall, the BUK9Y3R0-40E/GFX is a powerful and reliable transistor that can be used in a wide range of applications. Its low cost and low power consumption makes it a great choice for any design. Moreover, its working principle of allowing current to flow between the emitter and collector only when a positive voltage is applied makes it a great choice for power and logic circuits.

The specific data is subject to PDF, and the above content is for reference

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