BUK9Y43-60E/GFX Allicdata Electronics
Allicdata Part #:

BUK9Y43-60E/GFX-ND

Manufacturer Part#:

BUK9Y43-60E/GFX

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: MOSFET N-CH LFPAK
More Detail: Bipolar (BJT) Transistor
DataSheet: BUK9Y43-60E/GFX datasheetBUK9Y43-60E/GFX Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: *
Part Status: Obsolete
Description

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Introduction to BUK9Y43-60E/GFX

The BUK9Y43-60E/GFX is a high-efficiency 4-pin NPN bipolar junction transistor (BJT) for general-purpose use. It is designed for high-speed applications such as switching power supply, motor control, lighting solutions, home appliances and automotive electronics. The BUK9Y43-60E/GFX is characterized by a wide range of features, including low supply current, improved linearity and excellent thermal stability, offering superior performance in a variety of applications.

Application Field of BUK9Y43-60E/GFX

The BUK9Y43-60E/GFX is designed for a wide range of applications, including:

  • Lighting solutions: LEDs, CFLs, halogen, fluorescent, etc.
  • Switching power supplies: DC/DC, power adapters, PC power supplies, etc.
  • Motor control: DC and stepper motors.
  • Home appliances: refrigerators, washing machines, dishwashers, etc.
  • Automotive electronics: engine control, navigation systems, etc.

In addition, the device can be used in a variety of other applications where its features can be exploited to deliver superior performance and reliability.

Working Principle of BUK9Y43-60E/GFX

The BUK9Y43-60E/GFX is an NPN device. It can be used as a switch or amplifier, depending on the circuit and configuration. As a switch, it can be used to control a current, as in a relay circuit. As an amplifier, it can be used to increase the output signal from a low-level input, as in audio circuits.

The BUK9Y43-60E/GFX consists of three layers of semiconductor material. The first layer is a heavily doped P-type substrate, onto which a thin layer of heavily N-type material is deposited. On top of this is a layer of less heavily doped N-type material. The N-type and P-type layers form two PN junctions, which form the transistor\'s junction. The two PN junctions, when biased correctly, allow current to flow from the emitter to the collector.

The BUK9Y43-60E/GFX has several advantages that make it suitable for high-speed applications. It has a low VCE which makes switching faster, and it also has a low Vcesat which increases efficiency and power dissipation. Additionally, it has a higher frequency response than other BJTs, which allows for increased switching speeds.

Finally, the BUK9Y43-60E/GFX has a wide operating temperature range, making it suitable for use in extreme climates.

Conclusion

The BUK9Y43-60E/GFX is a high-efficiency 4-pin NPN bipolar junction transistor (BJT) for general-purpose use. It is designed for high-speed applications such as switching power supplies, motor control, lighting solutions, home appliances and automotive electronics. It is characterized by features including low supply current, improved linearity and excellent thermal stability, offering superior performance in a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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