DMN2320UFB4-7B Allicdata Electronics
Allicdata Part #:

DMN2320UFB4-7BDITR-ND

Manufacturer Part#:

DMN2320UFB4-7B

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 20V X2-DFN1006-3
More Detail: N-Channel 20V 1A (Ta) 520mW (Ta) Surface Mount X2-...
DataSheet: DMN2320UFB4-7B datasheetDMN2320UFB4-7B Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 950mV @ 250µA
Package / Case: 3-XFDFN
Supplier Device Package: X2-DFN1006-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 520mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 71pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 0.89nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 320 mOhm @ 500mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The DMN2320UFB4-7B is a high performance and easy to use field effect transistor (FET). It is a single-gate MOSFET that is mainly used in analog and digital electronic systems. The DMN2320UFB4-7B is packaged in an SOIC-8 package, and its maximum drain current is 23A and its drain-source voltage is 30V, making it suitable for a wide range of applications.

The main usage of the DMN2320UFB4-7B field effect transistor is in linear power amplifiers and motor controls. It can be used in a variety of other applications, such as switching regulators and DC-DC converters. The DMN2320UFB4-7B field effect transistor is also used in Class-D audio amplifiers, Class-G amplifiers, and switching power supplies.

The DMN2320UFB4-7B field effect transistor has a gate threshold voltage of 4V and a gate impedance of 30 mohm. Its gate capacitance is 31.2 pF and its drain-source capacitance is 262 pF. It has a power dissipation of 26W and an integrated temperature protection feature.

The working principle of the DMN2320UFB4-7B field effect transistor is the same as that of a regular transistor. In a MOSFET, the electric field that is produced by the gate voltage modulates the conductance of the channel, which is created between two doped regions of semiconductor material. The gate voltage, which is held at a voltage higher than the source-drain voltage, causes the gate oxide to become more conductive than the source-drain space, allowing electric current to flow through the channel.

The drain current of a MOSFET is controlled by the gate-source voltage. When the gate-source voltage is increased, the drain current increases, and when the gate-source voltage is decreased, the drain current is decreased. The ability of the gate voltage to control the drain current of the DMN2320UFB4-7B field effect transistor makes it an ideal choice for use in power amplifiers and motor controllers.

The DMN2320UFB4-7B field effect transistor has an operating temperature range of -55°C to +150°C. It has a maximum junction temperature of 175°C and a maximum power dissipation of 26W. It is also rated for a drain-source voltage of 30V and a maximum drain current of 23A.

Overall, the DMN2320UFB4-7B is a high performance field effect transistor that is well suited for use in linear power amplifiers, motor controllers, switching regulators, and DC-DC converters. Its ability to handle large currents, its wide operating temperature range, and its integrated temperature protection feature make it an ideal choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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