DMN2400UFB4-7 Discrete Semiconductor Products

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The DMN2400UFB4-7 is a single enhancement-type Power MOSFET from Diodes Inc., with an on-state drain-source resistance of 0.013 Ohm. It comes in an exposed-pad, plastic package which is suitable for surface mount assembly. This MOSFET is optimized for higher efficiency, low switching noise and fast switching speeds, making it a popular choice for many applications. Its drain current is rated at 30 Amps, maximum pulsed and its drain-source breakdown voltage is rated at 400V.

Application Field

The DMN2400UFB4-7 can be used in many application fields, especially those which require high power capacity and fast switching speeds. It is ideal for high frequency switching applications and is commonly used in power amplifiers, power supplies and other DC-DC applications. It can also be used in consumer electronics, lighting, and automotive applications.

Working Principle

The DMN2400UFB4-7 is a single enhancement-type Power MOSFET, which is a type of transistor device. It consists of a source terminal, a drain terminal, and a mildly-doped body or gate terminal between them. When a voltage is applied to the gate terminal, the drain-source resistance decreases, creating a conducting channel through which electrons can flow. The conductivity of the channel depends on the amount of current that is flowing through it, so the switch can be used to control the voltage and flow.

When the voltage applied to the DMN2400UFB4-7 is high enough to spin up the conducting channel, the transistor is said to be in the “enhancement mode”. This mode is also called “fully-on”, because the drain-source resistance is very low in this state. When the voltage is reduced, the drain-source resistance increases, which then reduces the current flow and eventually leads to the transistor being turned off.

The DMN2400UFB4-7 works on the principle of charge-coupling, which is a principle based on the interaction of two transistors. The Coulombic force of attraction is used to transfer electrons between two transistors. A voltage applied to the gate terminal triggers the transfer of electric charge between the two transistors, and the level of that voltage determines the level of charge transfer. This process is what enables the control of current and voltage.

The DMN2400UFB4-7 is a popular choice for many applications due to its excellent performance characteristics. Its low gate voltage, higher efficiency, and fast switching speeds make it an ideal choice for many applications. With its rated drain current of 30 Amps and drain-source breakdown voltage of 400V, the DMN2400UFB4-7 is a highly versatile Power MOSFET that can be used in a wide range of applications.

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