
Allicdata Part #: | DMN2550UFA-7BDITR-ND |
Manufacturer Part#: |
DMN2550UFA-7B |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 20V 0.6A X2DFN-3 |
More Detail: | N-Channel 20V 600mA (Ta) 360mW (Ta) Surface Mount ... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | 3-XFDFN |
Supplier Device Package: | X2-DFN0806-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 360mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 52.5pF @ 16V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 0.88nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 450 mOhm @ 200mA, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 600mA (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DMN2550UFA-7B is a single, n-channel depletion mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is built on a silicon dioxide insulation layer and is used as an electronic switch in various amplifying and switching applications. With its high performance and affordability, the DMN2550UFA-7B is a popular device used in telecommunications, medical and consumer electronics and in many other areas where low power is required.
The DMN2550UFA-7B is designed to be used as an open-drain switch, making it an ideal choice for applications such as digital logic control and signal switching. Its depletion mode of operation allows it to be working normally and to stay "on" when the gate voltage is at a low value. Thus, even without an external voltage applied, the FET can be used as a normally "off" switch.
The DMN2550UFA-7B is a low capacitance device, making it a good choice for signal switching. Its commonly used in computer applications, where it\'s manipulated by logical transitions to provide low-voltage switching. It’s also used in power management applications, where its low on-resistance enables efficient power control.The DMN2550UFA-7B is specifically designed to produce low on-resistance and low-noise operation. It’s capable of handling up to 0.5A continuous drain current and can switch up to 7V. It’s also characterized by fast switching speeds and short turn-off times, making it ideal for use in high-frequency systems. With its built-in protection, it’s also protected from damage due to over-current or self-heating.The DMN2550UFA-7B works by using the MOSFET’s gate which is the control electrode. When a voltage is applied to the gate, an electrical field is created which repels, or “pushes” electrons away from the surface of the MOSFET, creating a depletion layer. This in turn causes a depletion of the depleted region and allows current to flow from the drain to the source. The presence or absence of a voltage on the gate determines the amount of current that can flow through the device, thus controlling the switching action.The DMN2550UFA-7B can be used in a variety of applications due to its low power requirements, fast switching times, and short turn-off time. This makes it ideal for applications such as digital logic control, signal switching, power management, and in high-frequency systems. With its high performance and affordability, the DMN2550UFA-7B is a device that is sure to be found in a wide range of products and applications.
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