DMNH6021SPSQ-13

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	8-PowerTDFN
Supplier Device Package:	PowerDI5060-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	1.6W (Ta), 53W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1016pF @ 30V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	19.7nC @ 10V
Series:	Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs:	23 mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	55A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The DMNH6021SPSQ-13 is a MOSFET belonging to the family of single power field-effect transistors (FETs). It is used in power circuits with grids of up to 600V to control the power being provided or to provide overcurrent protection. This type of MOSFET is commonly used in automotive and industrial applications as it offers superior performance characteristics such as low gate-source capacitance, high input impedance, low on-state resistance, and low threshold voltage.

Despite its name, a MOSFET is not actually a transistor. Rather, it is a type of field-effect device. When voltage is applied to the gate of the device, a field of electrons is created that can act as a switch, allowing current to flow between the source and drain terminals. In a MOSFET, the field effect is created by the depletion region – a region of electrons which are either partially or completely absent in the channel between the source and drain. This behavior allows a MOSFET to be used as a switch since the depletion region can be changed by varying the voltage at the gate.

The DMNH6021SPSQ-13 is an “enhancement-mode” MOSFET, meaning it is normally off and the gate voltage must be increased to turn it on. Additionally, the threshold voltage – the voltage at which the device starts to conduct – is low at about 2.4V, making it suitable for use in low-power applications.

As with all MOSFETs, the DMNH6021SPSQ-13’s current-handling capability is determined by its maximum drain-source voltage (VDS) rating of 600V, maximum drain current (ID) rating of 11A and maximum power dissipation (PD) rating of 33W. This makes the device suitable for applications where a relatively low voltage and low current is required.

The device has two other useful characteristics – low on-state resistance and high input impedance. The on-state resistance is a measure of the amount of resistance present when the device is in the on-state, and is an important factor in calculating power dissipation. The high input impedance of the DMNH6021SPSQ-13 means it draws very little current from the gate, making it ideal for applications where a low current is available.

As well as its power rating, the DMNH6021SPSQ-13 also has a rugged construction, making it suitable for applications in harsh and demanding environments. The device also has a fast switching speed, allowing it to be used for high-speed control or protection circuits.

In summary, the DMNH6021SPSQ-13 is a single power field-effect transistor (FET) belonging to the family of MOSFETs. It provides superior performance characteristics and is suitable for use in low-power circuits with grids of up to 600V. Its low on-state resistance and high input impedance make it ideal for applications requiring low current, while its rugged construction, fast switching speed and low threshold voltage make it suitable for applications in harsh and demanding environments.

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