Allicdata Part #: | DMNH6022SSDQ-13DITR-ND |
Manufacturer Part#: |
DMNH6022SSDQ-13 |
Price: | $ 0.34 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET 2NCH 60V 7.1A 8SO |
More Detail: | Mosfet Array 2 N-Channel (Dual) 60V 7.1A, 22.6A 1.... |
DataSheet: | DMNH6022SSDQ-13 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.30429 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 7.1A, 22.6A |
Rds On (Max) @ Id, Vgs: | 27 mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 30V |
Input Capacitance (Ciss) (Max) @ Vds: | 2127pF @ 25V |
Power - Max: | 1.5W |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
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DMNH6022SSDQ-13 is a type of field-effect transistor (FET) array. As the name implies, it consists of a number of individual transistors integrated into a single package. The DMNH6022SSDQ-13 is a highly integrated, high-speed device that can provide a powerful and cost-effective solution for signal switching, signal conditioning, and various other applications.
The DMNH6022SSDQ-13 is a monolithic MOSFET array containing four N-channel FETs and four P-channel FETs. All eight FETs share a common gate which makes it possible to switch signals by applying a single voltage or current signal to the common gate. Each individual FET can be independently adjusted to maximize performance for the particular application for which it is used.
The four N-channel FETs in the DMNH6022SSDQ-13 are typically used as switches, amplifiers, or other similar functions in applications such as motor control, audio amplifiers, telecommunications, and data-acquisition systems. The four P-channel FETs are used for functions such as VCOs, programmable amplifiers, or current sources in low-noise and low-power applications.
The working principle of the DMNH6022SSDQ-13 is based on an effect known as the “field-effect,” which is a phenomenon involving electrical and magnetic fields. As a signal is applied to the gate of the FET, it causes a voltage gradient to develop. This voltage gradient induces an electrical field across the source-drain junction of the FET and thus creates a “channel,” allowing current to flow between the source and the drain. By varying the signal applied to the gate, the amount of current flowing through the channel can be controlled.
The DMNH6022SSDQ-13 is a versatile device that can be used in many different applications because of its flexibility and wide operating-frequency range. It offers low-input capacitance and high impedance, making it suitable for applications such as motor control and signal switching. It also features a wide operating temperature range, making it suitable for use in high-temperature and extreme-environment conditions.
The DMNH6022SSDQ-13 is a popular choice for many applications due to its low cost and high performance. It is used in motor control, telecommunications, data acquisition, audio amplifiers, and other applications. It can also be used to condition signals, providing a cost-effective and efficient solution for signal switching and conditioning.
In summary, the DMNH6022SSDQ-13 is a type of FET array that is suitable for a wide variety of applications. Its flexibility, wide operating-frequency range, low-input capacitance, and high impedance make it ideal for signal switching and signal conditioning. Its low cost and high performance make it a popular choice for many applications. Whether it is used for motor control, data-acquisition, telecommunications, or audio amplifiers, the DMNH6022SSDQ-13 can be an excellent solution.
The specific data is subject to PDF, and the above content is for reference
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