EPC2046ENGRT Discrete Semiconductor Products |
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Allicdata Part #: | 917-EPC2046ENGRTR-ND |
Manufacturer Part#: |
EPC2046ENGRT |
Price: | $ 3.16 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | EPC |
Short Description: | TRANS GAN 200V BUMPED DIE |
More Detail: | N-Channel 200V 11A (Ta) Surface Mount Die |
DataSheet: | EPC2046ENGRT Datasheet/PDF |
Quantity: | 3000 |
500 +: | $ 2.87439 |
Vgs(th) (Max) @ Id: | 2.5V @ 7mA |
Package / Case: | Die |
Supplier Device Package: | Die |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | -- |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 345pF @ 100V |
Vgs (Max): | +6V, -4V |
Gate Charge (Qg) (Max) @ Vgs: | 3.6nC @ 5V |
Series: | eGaN® |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 20A, 5V |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Ta) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | GaNFET (Gallium Nitride) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The EPC2046ENGRT MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) is a specialized type of FET (Field-Effect Transistor), and it is used in a variety of applications. This MOSFET uses silicon-on-insulator (SOI) technology, and it features high-speed switching, low power dissipation and a compact size.
EPC2046ENGRT application field covers many areas in consumer electronics, like smartphones, laptops, computers and more. This type of FET is mainly used for signal conditioning and for controlling high-current signals. Additionally, it can be used in power switching, motor control and high-speed data transmission.
Basically, a MOSFET is different from other types of FET because it operates as a switch rather than an amplifier. In a MOSFET, current is controlled by the voltage applied to the gate terminal. If a voltage is applied to the gate terminal, it creates an electric field which attracts electrons to the gate, creating a layer of electrons on the gate terminal. This creates a channel between the source and drain terminals, thus allowing current to pass through the MOSFET.
The EPC2046ENGRT MOSFET is a single package chip with four terminals: the source terminal, the drain terminal, and the gate terminal, and a ground terminal. The drain is the load side, and the source is the source side of the MOSFET. The gate terminal controls the current through the channel. The ground terminal is attached to the drain to form a reference for the gate.
The EPC2046ENGRT MOSFET has some very advanced features that make it ideal for high speed operations. The first feature is its low input capacitance and high output current. This makes it ideal for high speed switching applications, as it can switch in a fraction of the time it takes other types of FETs. Additionally, the EPC2046ENGRT MOSFET has high-temperature operation and low power dissipation, which makes it very efficient in comparison to other types of FETs.
Overall, the EPC2046ENGRT MOSFET is a popular choice when it comes to high-speed switching and controlling high-current signals. It is highly efficient, and its small size makes it ideal for a variety of applications. Its highly advanced features make it perfect for high-speed operations, and its low power dissipation and high temperature operation make it very efficient in comparison to other types of FETs.
The specific data is subject to PDF, and the above content is for reference
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