IPB100N04S4H2ATMA1

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The IPB100N04S4H2ATMA1 is a part of the family of enhancement-mode vertical MOSFETs. This device utilizes advanced trench technology to provide incredible on-state performance with low-gate charges, making it ideal for many switching applications. It offers a wide range of benefits for power systems design, such as low gate charge, low output capacitance, fast switching time, and low on-state resistance. This article will discuss the application fields and working principles of the IPB100N04S4H2ATMA1.The IPB100N04S4H2ATMA1 is mainly suitable for DC-DC converters, motor control, and output circuit designs. It can be used in both high-blocking voltage applications (above 600V) and low-blocking-voltage applications (up to 30V). It is also suitable for PFC (Power Factor Correction) and Resonant Converters and is best used in switch-mode power supply drive circuits.The IPB100N04S4H2ATMA1 has several unique characteristics that make it ideal for modern electronic devices. It has a trough-shaped source structure, advanced fabrication process, and low gate charge that together provide outstanding performance. Additionally, this device has an excellent Figure of Merit (FOM) of 9.5pF and a low on-state resistance of 2.85mΩ. This makes it suitable for a wide range of applications.So what is the working principle of the IPB100N04S4H2ATMA1? The IPB100N04S4H2ATMA1 utilizes the enhancement-mode of operation when a voltage is applied between its gate and source. When a positive voltage is applied, a depletion region is removed from the channel and a current can flow through the device. When a negative voltage is applied, the depletion region is increased and the current is cut off.There are two main processes that are responsible for the electrical characteristics of the MOSFET. The first process is the channel-length modulation, which occurs when an applied gate voltage alters the mobility of carriers in the active region. The second process is the drain saturation current, which is the current that flows through the device when the gate-to-source voltage is large enough to pinch off the active channel.The IPB100N04S4H2ATMA1 has many benefits over other MOSFETs. It has a low gate charge, which reduces switching time. It also has a low output capacitance, which allows for higher switching frequencies and better low-frequency response. Finally, it has a low on-state resistance, which reduces switching losses and increases efficiency. Because of these features, the IPB100N04S4H2ATMA1 is ideal for use in modern electronic devices. Overall, the IPB100N04S4H2ATMA1 is an excellent choice for high-blocking-voltage and low-blocking-voltage applications, such as DC-DC converters, motor control, and output circuit designs. Its low gate charge, low output capacitance, fast switching time, and low on-state resistance greatly improve power systems design and increase the efficiency of electronic devices. Its unique structure and low-level operational characteristics make it a reliable and cost-effective choice for many power systems designs.

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