IPB120N06S403ATMA1

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The IPB120N06S403ATMA1 is a high-voltage fast-switching N-channel MOSFET, optimized for high-speed switching applications. It is ideally suited for power management and motor control circuits, switching power supplies, and DC-DC converters, as well as other high-speed switching applications that require high-current devices. This MOSFET is also suitable for a variety of linear applications, such as low-level audio, photo Flash drivers, and opto-couplers, and suits any circuit with a Vds of 120 V.

The main advantage of the IPB120N06S403ATMA1 is its high speed and low output capacitance. It has a switching speed of 1.5 nanoseconds, which is thirty times faster than conventional N-Channel MOSFETs, allowing it to switch faster and with less power loss. It also features a low output capacitance of 15 pF, further improving its response time and transient behavior.

The key attributes of the IPB120N06S403ATMA1 are its low on-state resistance and high forward current capability. Its Rds(on) is only 9 mOhms, allowing it to transfer more current with less power loss than alternative components. It can handle a continuous forward current of up to 42 A, and a pulsed current of 75 A. This makes it an excellent choice for a variety of high-speed switching applications.

The IPB120N06S403ATMA1 also has excellent avalanche characteristics, with an avalanche energy rating of up to 26 mJ. This makes it ideal for switching and protection circuits, as it can withstand high bursts of energy without damage. This also makes it suitable for applications where reversing the energy flow is necessary, such as contactors and relays.

At the heart of the IPB120N06S403ATMA1 is a transistor. Transistors are electronic devices that are used to control the flow of electrical current. A MOSFET (metal-oxide semiconductor field-effect transistor) is a type of transistor that is used in many applications due to its fast switching speed and low power consumption. The IPB120N06S403ATMA1 is an N-Channel MOSFET, meaning that the current flows from the drain to the source when the channel is opened by the gate voltage.

The IPB120N06S403ATMA1 has a maximum drain-source voltage of 120 V and a maximum gate-source voltage of +-20 V. It is also RoHS compliant, Low RDS(on) and Halogen-Free. It is designed to be used in a wide range of temperature ranges, with an operating temperature range of -55 to +175°C. Its maximum junction temperature is 175°C, allowing it to operate in high ambient air temperatures.

The IPB120N06S403ATMA1 is a versatile MOSFET which is suitable for a wide range of applications that require a fast switching speed, low power consumption and high current handling capability. It is the ideal choice for high-speed power management and motor control circuits, switching power supplies, and DC-DC converters.

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