Allicdata Part #: | IPB100N06S3-04INTR-ND |
Manufacturer Part#: |
IPB100N06S3-04 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 55V 100A TO-263 |
More Detail: | N-Channel 55V 100A (Tc) 214W (Tc) Surface Mount PG... |
DataSheet: | IPB100N06S3-04 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 150µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | PG-TO263-3-2 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 214W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 14230pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 314nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 4.1 mOhm @ 80A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The IPB100N06S3-04 is a single, Enhancement Mode, High Voltage N-Channel Power MOSFET. It is an excellent choice for medium voltage switching applications that require low gate drive power, low on-state resistance, fast switching speed and soft recovery from avalanche or diode conduction.
Application field of IPB100N06S3-04 is both consumer and commercial, including DC/DC converters, solid-state relays, power supplies, many audio applications, and programmable logic controllers. This MOSFET can be used for many of the switching and control applications that require high blocking capability. It offers the benefits of low gate charge, low parasitic capacitances, low on-state resistance and high current capability, making it ideal for many of today’s most demanding applications.
The working principle of IPB100N06S3-04 is no different than other power MOSFET transistors. Its basic construction is composed of a gate, drain and source which are used to control the flow of electrical current through a channel beneath the gate. The gate is the terminal that receives most of the controlling current when the transistor is used in the enhanced-mode operation. A large current flowing through the drain cause large voltage to develop across the channel and this voltage controls the current flow through the channel between the source and drain.
MOSFETs of this type operate in two distinct modes: enhanced mode and depletion mode. In the enhanced-mode operation, the MOSFET is typically biased in a direction with enough current to cause a channel to form underneath the gate. As the voltage at the gate increases, the channel widens, providing higher conduction. In the depletion mode, the MOSFET is reversed biased and a channel does not form naturally. For low voltage and current applications, enhanced mode is preferred.
The IPB100N06S3-04 is a popular power MOSFET because of its low gate charge, low on-state resistance, fast switching speed, soft recovery from avalanche or diode conduction, and high blocking capability. It is suited to many medium voltage applications and is an ideal choice for powering DC/DC converters, power supplies, and many audio applications.
The specific data is subject to PDF, and the above content is for reference
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