Allicdata Part #: | IPB120P04P4L03ATMA1TR-ND |
Manufacturer Part#: |
IPB120P04P4L03ATMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 40V 120A TO263-3 |
More Detail: | P-Channel 40V 120A (Tc) 136W (Tc) Surface Mount D²... |
DataSheet: | IPB120P04P4L03ATMA1 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.2V @ 340µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263AB) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 136W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 15000pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 234nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 3.1 mOhm @ 100A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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Transistors - FETs, MOSFETs - Single
The IPB120P04P4L03ATMA1 is a single N-Channel power MOSFET which means its a type of field effect transistor (FET). This type of transistor is capable of handling very high currents and is specifically designed to be used in power electronics applications such as radiofrequency (RF) power amplifiers.
Application Field and Working Principle
The IPB120P04P4L03ATMA1 is suitable for wide range of applications such as in automated test equipment systems (ATE), high-frequency switching in industrial and consumer applications, switched mode power supplies (SMPS), automotive, display solutions and drones. The applications demand high power efficiency and reliability, and the IPB120P04P4L03ATMA1 is able to provide those desired features.
At a basic level, FETs are rather simple devices but they still perform highly complex functions in the real world. FETs are essentially very long channel MOSFETs. In the case of a single N-Channel power MOSFET, such as the IPB120P04P4L03ATMA1, the "gate" of the FET is connected to a voltage source (typically ground or a power supply). When the voltage source is applied to the gate, it creates an electrostatic field in the channel of the FET. This electrostatic field (also known as a "potential barrier") is what allows the FET to control the current flow across the channel.When the voltage applied to the gate is low, the electrostatic field is weak and the current flow is therefore relatively high. However, when the voltage applied to the gate is increased, the electrostatic field becomes stronger and the current flow is reduced. This is the basic principle behind how FETs are able to control current flow.
Conclusion
In conclusion, the IPB120P04P4L03ATMA1 is a single N-Channel power MOSFET designed for applications where efficient power management and high reliability is required. The device operates by using an electrostatic field created in the channel of the FET to control the current flow across the channel. The IPB120P04P4L03ATMA1 is suitable for many different applications such as in ATE systems, high-frequency switching in industrial and consumer applications and switched mode power supplies.
The specific data is subject to PDF, and the above content is for reference
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