IPB180N04S401ATMA1

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IPB180N04S401ATMA1 is a type of Metal–Oxide–Semiconductor Field-Effect Transistor (MOSFET) that is widely used in a variety of applications. It is a common choice for both commercial and industrial applications due to its low-cost, low-noise, and low-power features.

A MOSFET is a type of FET (field effect transistor) which is composed of four regions including a source region, a drain region, a channel, and a gate. It is a three-terminal device that utilizes the mobility of charge carriers (electrons or holes) through the channel region controlled by the connection between the gate and an external voltage.

The IPB180N04S401ATMA1 is a single n-channel enhancement-mode MOSFET that is designed in a planar double-diffused manner with a thick gate oxide. This type of MOSFET is capable of higher drain current and outstanding performance. It is also characterized by low on-resistance and maximum operating voltage of 200V. It has a higher current capability of 18A at 25C and 4A at 100C. It features a low avalanche energy, low gate charge, and a limited internal body diode.

The IPB180N04S401ATMA1 is ideal for power switch applications particularly for automotive, consumer, industrial, and server applications where a low conducting loss and high efficiency is required. It is also a perfect choice for flyback topologies, boost converters, power factor correction circuits, and other high-frequency DC-DC converters. Additionally, it is used in motor drive applications, relay drivers, and battery protection circuits.

The working principle of the IPB180N04S401ATMA1 is based on the MOSFET operation where the conductivity of the transistor is determined by applying a voltage between the gate and the source terminals through a reverse biased gate oxide. The amount of voltage applied at the gate will determine the current flow in the transistor. The current can be increased or decreased by increasing or decreasing the voltage applied to the gate. The main benefit of this type of transistor is that it allows a higher current to flow while consuming very little power.

In conclusion, the IPB180N04S401ATMA1 is a single n-channel enhancement-mode MOSFET that is designed for power switch applications. It is characterized by low on-resistance, maximum operating voltage of 200V, and higher current capability of 18A at 25C and 4A at 100C. Its working principle is based on the MOSFET operation where the conductivity of the transistor is determined by applying a voltage between the gate and the source terminals through a reverse biased gate oxide. This type of MOSFET allows for a higher current to flow while consuming very little power and is perfect for flyback topologies, boost converters, power factor correction circuits, and other high-frequency DC-DC converters.

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