| Allicdata Part #: | IPB180N10S403ATMA1-ND |
| Manufacturer Part#: |
IPB180N10S403ATMA1 |
| Price: | $ 1.58 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH TO263-7 |
| More Detail: | N-Channel 100V 180A (Tc) 250W (Tc) Surface Mount P... |
| DataSheet: | IPB180N10S403ATMA1 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 1.58000 |
| 10 +: | $ 1.53260 |
| 100 +: | $ 1.50100 |
| 1000 +: | $ 1.46940 |
| 10000 +: | $ 1.42200 |
| Vgs(th) (Max) @ Id: | 3.5V @ 180µA |
| Package / Case: | TO-263-7, D²Pak (6 Leads + Tab) |
| Supplier Device Package: | PG-TO263-7-3 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 250W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 10120pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 140nC @ 10V |
| Series: | Automotive, AEC-Q101, OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 3.3 mOhm @ 100A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 180A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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FETs, or field effect transistors, are a type of semiconductor that is used in a variety of electronic components, including mixers, amplifiers, switches, oscillators, and various logic circuits. The IPB180N10S403ATMA1 is a n-channel enhancement mode MOSFET that is commonly used for power regulation in industrial, computer, automotive, and consumer applications. In this article, we will take a closer look at the application field and working principle of the IPB180N10S403ATMA1.
The IPB180N10S403ATMA1 is a high voltage, high-current MOSFET that has a maximum drain-source breakdown voltage of 180V and a gate-source threshold voltage of 4V. It has excellent switching speed and a low on-resistance of 0.35Ω and a minimum off-state drain current of less than 1uA. The device also has a continuous drain current rating of 10A and a maximum power dissipation of 80W. This makes it ideal for use in high-power applications such as power conditioning, conversion, and regulation.
The application field of the IPB180N10S403ATMA1 is quite broad, as it can be used in a variety of systems. It is commonly used in power regulation in industrial and computer applications, such as motor control, variable speed drives, and DC-DC converters. It is also used in automotive applications, such as power switching circuits, motor control, and power management. In addition, it can be used in consumer electronics, such as DVD players, HDTVs, and gaming consoles. This makes it a very versatile device that can be used in a wide range of applications.
The working principle of the IPB180N10S403ATMA1 is based on the concept of a field-effect transistor (FET). Like other FETs, it utilizes an electric field to control the current flow between its source and drain terminals. The gate terminal is used to control the electric field, which in turn controls the current flow between the source and drain terminals. When the gate voltage is low, the electric field between the source and the drain is reduced, which reduces the current flow. When the gate voltage is high, the electric field is increased, which allows the current to flow.
The IPB180N10S403ATMA1 is an excellent choice for power regulation applications due to its high switching speed, high current capacity, and low on-resistance. Its wide application field and relatively simple working principle make it an ideal choice for a variety of applications. Its durability and reliability make it suitable for use in industrial and automotive applications. As such, it is a very versatile device that has a wide range of uses in a variety of different applications.
The specific data is subject to PDF, and the above content is for reference
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IPB180N10S403ATMA1 Datasheet/PDF