IPB100N06S3L-03

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The IPB100N06S3L-03 is a high-performance insulation gate power field effect transistor (FET). It belongs to the IPE single series of FETs. This FET can provide designers with good electrical and thermal characteristics. This product can be used in a variety of applications such as motor control, digital power converter, flat panel display, home appliances, switch mode power supplies (SMPS), and automotive electronics.

The IPB100N06S3L-03 is a single N channel junctionless FET which utilizes a novel gate technology. The gate is formed by heavily doping the source, drain and channel regions with a special gate material which allows a small parasitic capacitance, hence improved RDS(on). The silicon technologies used in the FET are fully optimized at high temperature, so the device is suitable for use in high thermal conditions.

The IPB100N06S3L-03 can be used for high frequency switching applications, power converters for customer electronics and industrial systems, automotive applications, light dimming and HVAC applications. Because of its low parasitic capacitance, the FET can be used in high-frequency operation up to 880kHz and also it can be used up to a voltage of 20V.

The working principle of the FET is based on the “Field Effect”. This is a phenomenon which occurs in a semiconductor when the electric field produced by charged carriers like electrons or holes creates a field distribution in the medium of the device. In this FET, this phenomenon occurs in a MOS structure where a gate terminal, which is insulated from the conductive channel is used to control the conducting nature of the channel.

When a voltage is applied to the gate terminal, it electrical charges the channel. This produces a region in which electrons can travel from the source and drain regions of the device. The higher the voltage applied to the gate, the larger is the number of electrons which can travel through the channel and hence there will be higher currents flowing between the source and the drain. When the gate voltage is removed, the electrons are discharged and the device reverts back to its non-conductive mode.

The IPB100N06S3L-03 FET has lower gate charge and low gate input capacitance, so it can be used in high-frequency applications. The device also has a low on-resistance, so can be used in high power applications. The device is also low gate threshold, so that it can be used even with low gate input voltage (<2V). This FET also has low thermal resistance, so it is suitable for high temperature applications.

The IPB100N06S3L-03 FET can be used for a variety of applications such as motor control, digital power converter, flat panel display, home appliances, switch mode power supplies (SMPS), and automotive electronics. It is a reliable high-performing device which offers good electrical and thermal characteristics at high frequencies and high temperatures.

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