Allicdata Part #: | IPB100N04S2L03ATMA1TR-ND |
Manufacturer Part#: |
IPB100N04S2L03ATMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 40V 100A TO263-3 |
More Detail: | N-Channel 40V 100A (Tc) 300W (Tc) Surface Mount PG... |
DataSheet: | IPB100N04S2L03ATMA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | PG-TO263-3-2 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6000pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 230nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 3 mOhm @ 80A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tape & Reel (TR) |
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IPB100N04S2L03ATMA1 is a single, N-channel Power MOSFET transistor designed for use in various desktop or mobile applications requiring low-gate charge and fast, efficient switching. The MOSFET is produced by IPB, a Taiwanese leading semiconductor manufacturing brand. The transistor’s package consists of a metal can with an internal die and a contact pad, allowing for 1% tolerance temperature control and thermal dissipation.
IPB100N04S2L03ATMA1 has a maximum drain-source voltage (Vds) of 100V and a drain-source current (Ids) of 4A. It is available in a TO-252 (DPAK) package and its dissipated power is rated at 10W. The drain-source breakdown voltage (BVds) is 8V and it has a continuous drain current (Id) of 4A. The product has an operating junction temperature of -55°C to 175°C. It has an Rds(on) of 0.375Ω and its total gate charge (Qg) is only 36nC at 4A.
Transistors switch on and off by varying the voltage and current on the gate. The IPB100N04S2L03ATMA1\'s gate is an electrically isolated field-effect transistor (FET) substrate with a terminal voltage applied to the gate. When the voltage on the gate rises, it creates an electric field which causes the PN layers in the transistor to repel each other. As a result, electrons move onto the gate and the MOSFET will be turned on. When the voltage on the gate decreases, the electric field weakens and the electrons return to their original positions, turning the MOSFET off.
Due to its low gate charge and fast switching speeds, the IPB100N04S2L03ATMA1 is widely used in power supplies, DC-DC converters, notebook computers, portable devices, and other applications where a low power gain is needed. It has been used in various medical and industrial test and measurement equipment; automotive electronics, including safety and convenience applications; and in many other consumer and industrial applications.
The IPB100N04S2L03ATMA1 is an ideal choice for applications requiring a low-power switch with low gate charge and fast switching speeds. It is also a cost-effective solution for consumers and manufacturers due to its low price and reliable performance.
The specific data is subject to PDF, and the above content is for reference
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IPB13N03LB | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 30A D2PAK... |
IPB14N03LA G | Infineon Tec... | -- | 1000 | MOSFET N-CH 25V 30A D2PAK... |
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IPB120N04S3-02 | Infineon Tec... | -- | 1000 | MOSFET N-CH 40V 120A TO26... |
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