Allicdata Part #: | IPB100N06S3L-04INTR-ND |
Manufacturer Part#: |
IPB100N06S3L-04 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 55V 100A TO-263 |
More Detail: | N-Channel 55V 100A (Tc) 214W (Tc) Surface Mount PG... |
DataSheet: | IPB100N06S3L-04 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.2V @ 150µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | PG-TO263-3-2 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 214W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 17270pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 362nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 3.5 mOhm @ 80A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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IPB100N06S3L-04 is a three-terminal, logic-level enhancement mode power MOSFET, an integrated power device (IPD) with very low on-resistance, 180mΩ (typical). MOSFETs are commonly used electronic components used in a variety of application fields, particularly as power management solutions in power electronics and in the automotive industry. With its Logic Level feature, this device can switch on or off at voltages as low as 3.3V which makes it an ideal solution for low-voltage applications.
The IPB100N06S3L-04 is a single MOSFET with a Gate-Source Voltage (VGS) of -4.5V to -12V. It has a maximum Drain-Source Voltage (VDS) of 100V and a continuous Drain-Source Current (ID) of 30A. It has a Drain-Source On-Resistance (RDS(on)) of 180mΩ at VGS=-4.5V and a maximum acceptable gate current of 6A. Its Gate-Source Leakage current (IGSS) is very low too, being below 1nA. It features very low on-resistance, which makes it ideal for applications requiring a low-power solution. This device also has a maximum total device dissipation of 388W.
The working principle of an IPB100N06S3L-04 is quite simple. It is an enhancement type MOSFET, meaning that its channel conducts current with the application of a sufficiently low voltage between its Gate and Source. This voltage is referred to as the Gate-Source Voltage (VGS) and it is measured in Volts. When a specific voltage is applied to the Gate electrode, a corresponding electric field is created across the channel, resulting in a conduction path between the Source and Drain terminals. The higher the Gate-Source Voltage, the greater the electric field, and hence the higher the conduction level.
The IPB100N06S3L-04 can be used in a variety of different applications such as motor drive systems, lighting control systems, or any low-voltage applications. It can also be used in consumer electronic devices such as laptops, TVs, or cell phones. It is also suitable for automotive applications such as car audio, power windows, and power outlets.
The IPB100N06S3L-04 is a great device for low-voltage applications due to its on-resistance and its low voltage thresholds for switching. It has a wide range of applications and can be used in a variety of different industries. Its low on-resistance makes it an excellent choice for applications requiring a power management solution.
The specific data is subject to PDF, and the above content is for reference
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