IPB100N08S207ATMA1 Allicdata Electronics
Allicdata Part #:

IPB100N08S207ATMA1TR-ND

Manufacturer Part#:

IPB100N08S207ATMA1

Price: $ 1.10
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 75V 100A TO263-3
More Detail: N-Channel 75V 100A (Tc) 300W (Tc) Surface Mount PG...
DataSheet: IPB100N08S207ATMA1 datasheetIPB100N08S207ATMA1 Datasheet/PDF
Quantity: 1000
1000 +: $ 0.98644
Stock 1000Can Ship Immediately
$ 1.1
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3-2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 300W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 80A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 75V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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IPB100N08S207ATMA1 is a type of N-channel power Metal-oxide-semiconductor Field-effect Transistor (MOSFET). This field-effect transistor was designed to switch large currents in electrical circuits. It is widely used in power supply design and power management solutions, as well as in applications such as amplifiers, motor control, solenoids, speed sensors, and automotive circuits.

The IPB100N08S207ATMA1 is composed of a substrate (typically silicon or gallium arsenide), voltage source, source electrode, drain electrode and gate electrode. The device is built with a semi-insulating substrate material, which allows for high-frequency operation, excellent current capacity and high switching speed. The source and drain are connected to the substrate and act as current terminals for the MOSFET. The gate is not connected to the substrate and is used to control the current flow through the device. When a voltage is applied to the gate electrode, a voltage drop occurs across the device, allowing current to flow from the source to the drain. When the voltage is decreased, the device effectively cuts off current, acting as a switch.

The IPB100N08S207ATMA1 is rated for up to 100A of continuous drain current and up to 8A of peak drain current. It can handle drain-source voltages (VDSS) up to 20V and maximum gate-source voltages (VGSS) of 12V. These parameters indicate the device’s ability to safely switch large currents. The device also has a low on-resistance (RDSon) of 17.35mΩ, which is important because it means that the device can switch large currents with very low power losses.

The IPB100N08S207ATMA1 also has a variety of benefits that make it suitable for power management applications. For example, its low on-resistance facilitates low power losses, making it more efficient than other types of transistors. It also requires very low gate-source and drain-source voltages, making it ideal for low-voltage applications. Additionally, its built-in protection features allow for higher reliability and protection against negative factors such as voltage or current spikes.

The IPB100N08S207ATMA1 is a versatile and efficient device that can be used in a variety of applications. It is commonly used for switching heavy loads in industrial and automotive applications, as well as for powering digital circuits in consumer electronics and other devices. The device is also popular in power management solutions, where it can be used to regulate current draw from batteries or power supplies.

The specific data is subject to PDF, and the above content is for reference

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