IPD80N04S306ATMA1

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IPD80N04S306ATMA1 Application Field and Working Principle

IPD80N04S306ATMA1 is a n-channel MOSFET with a vertical DMOS structure. It is typically used in the switches of telephones, high-pressure control systems, motor controllers, and many other power management applications. This device has a drain current of 80A, drain-source voltage of 30V, and a package size of 800mΩ.

MOSFETS are transistors which use a gate to control the flow of current between the source and the drain. As such, MOSFETS are commonly referred to as switches. The IPD80N04S306ATMA1 is a type of MOSFET which is capable of handling higher current and voltage load compared to other types of MOSFETS.

The IPD80N04S306ATMA1 MOSFET has several features and benefits which make it suitable for a wide range of applications. The device has an integrated anti-parallel diode which helps reduce power loss and potential damage to the device due to the presence of the diode. It also features a low on-state resistance of 800mΩ which helps reduce power dissipation, making it more efficient and reliable. The device also supports high frequency switching with a maximum operating frequency as high as 100MHz. In addition, it has a low power consumption of 3V at a maximum junction temperature of 125°C.

The working principle of the IPD80N04S306ATMA1 is similar to that of other MOSFETs. When a positive voltage is applied to the gate of the MOSFET, it opens up and enables current to flow from source to drain. The flow of current is limited by the resistance of the MOSFET. When the gate voltage is removed, the MOSFET turns off, preventing the flow of current. The operating voltage and current of the MOSFET depend on the gate voltage.

In conclusion, the IPD80N04S306ATMA1 is a n-channel power MOSFET with a vertical DMOS structure. It is ideal for switches, controllers, and motor control applications. It has an integrated anti-parallel diode, low on-state resistance, high frequency switching capability, low power consumption, and a maximum operating temperature of 125°C. The operating principle of the device is similar to that of other MOSFETs, with a positive voltage applied to the gate enabling current to flow from source to drain.

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