Allicdata Part #: | IPD80R280P7ATMA1TR-ND |
Manufacturer Part#: |
IPD80R280P7ATMA1 |
Price: | $ 1.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 800V 17A TO252 |
More Detail: | N-Channel 800V 17A (Tc) 101W (Tc) Surface Mount TO... |
DataSheet: | IPD80R280P7ATMA1 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.97324 |
Vgs(th) (Max) @ Id: | 3.5V @ 360µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 101W (Tc) |
FET Feature: | Super Junction |
Input Capacitance (Ciss) (Max) @ Vds: | 1200pF @ 500V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 36nC @ 10V |
Series: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 280 mOhm @ 7.2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 17A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The IPD80R280P7ATMA1 transistor is a single n-channel insulated gate field effect transistor, which is commonly referred to as an FET or MOSFET. This type of transistor is a versatile device that can be used in numerous applications. The IPD80R280P7ATMA1 transistor is designed to handle current loads of up to 80A, making it well-suited for a wide range of power supply and switching applications.
The IPD80R280P7ATMA1 transistor is a popular choice for many designers because it is capable of providing high-performance operation while still being inexpensive. It is also simple to use and can be incorporated into existing designs without requiring major modifications. This transistor is available in a variety of packages, so it can easily be tailored to the specific needs of the application.
The IPD80R280P7ATMA1 transistor operates in the same manner as all other FETs and MOSFETs. It is composed of three main components: the source, gate, and drain. The source is a conductive metal that is used to connect the transistor to an external power source. The gate is a metal oxide semiconductor (MOS) layer that acts as an insulating barrier between the source and the drain. The drain is an electrically conducting metal layer that is connected to a load.
When the IPD80R280P7ATMA1 transistor is used as a switch, current flows through the source to the gate, which control the amount of current that can flow through it. By varying the voltage across the gate, the amount of current that can flow through the transistor can be controlled. This makes the IPD80R280P7ATMA1 ideal for controlling the switching of power supplies, allowing designers to provide efficient power delivery with minimal power loss.
The IPD80R280P7ATMA1 transistor can also be used as an amplifier. When used as an amplifier, current is supplied to the gate and then amplified by the transistor. This allows designers to increase the current output of an amplifier without the need for a large power supply or complex amplifier circuitry.
The IPD80R280P7ATMA1 transistor has a wide range of applications and can be used in everything from automotive systems to audio applications. It is best suited for high-current loads, such as those found in power supply applications, as well as small-signal applications, such as audio amplifiers. This type of transistor is also an excellent choice for controlling the speed of electric motors, making it an ideal choice for robotics applications.
Overall, the IPD80R280P7ATMA1 transistor is a versatile and inexpensive device that can be used in a wide range of applications. Its ability to efficiently handle high-current loads, as well as its ability to amplify small signals, makes it an invaluable component for any designer. As such, it has become a popular choice for many designers who need a high-performance and economical solution for their projects.
The specific data is subject to PDF, and the above content is for reference
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