IPD85P04P4L06ATMA1

Vgs(th) (Max) @ Id:	2.2V @ 150µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	PG-TO252-3-313
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	88W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	6580pF @ 25V
Vgs (Max):	±16V
Gate Charge (Qg) (Max) @ Vgs:	104nC @ 10V
Series:	Automotive, AEC-Q101, OptiMOS™
Rds On (Max) @ Id, Vgs:	6.4 mOhm @ 85A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	85A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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IPD85P04P4L06ATMA1 application field and working principleThe IPD85P04P4L06ATMA1 is a high-performance N-channel MOSFET (metal-oxide-semiconductor field-effect transistors) that is currently spearheaded by major semiconductor company Infineon. This type of transistor is fabricated using DMOS (double-diffusion metal-oxide semiconductor) technology, and designed for 15-volt applications targeting automotive and industrial applications. These versatile parts provide very low leakage currents and low on-state resistance, making them ideal for applications in power management. Due to their extremely low on-state resistance, these transistors are lower power dissipation and improved efficiency over their predecessors. A MOSFET is basically a transistor which is composed of an insulated gate and a conducting channel. When subjected to an appropriate bias, an electric charge is made to flow from the Source terminal to the Drain terminal. This electric charge interacts with the gate and the channel to produce a current flow between source and drain, effectively controlling the Drain current based on the applied voltage at the gate. As such, the transistor is activated whenever a gate voltage is applied. The high-performance N-channel IPD85P04P4L06ATMA1 MOSFET can be used for a wide variety of electronic applications and circuits. Its applications generally include power management, switching, and battery protection. Moreover, it can be used for voltage regulation, power amplifiers, linear output stages, load switches, drive circuits, and logic switches.Due to their very low on-state resistance and extremely low leakage currents, the IPD85P04P4L06ATMA1 MOSFET is perfect for automotive applications which require low power dissipation and optimized efficiency. It is ideal for energy management in avalanche applications, making it excellent for automotive power systems, such as ABS (anti-lock braking systems), airbag, and stability control. Moreover, this N-channel MOSFET is suitable for both continuous and pulse operation, making it applicable to a wide variety of applications such as DC-DC, incandescent lighting, and voltage regulation.In terms of working principle, the IPD85P04P4L06ATMA1 MOSFET works by making use of an insulated gate and a conducting channel. When a voltage is applied on the gate, a charge is made to flow from the Source terminal to the Drain. This flow of charge interacts with the gate and the channel, effectively producing a current between source and drain. This allows the transistor to be activated when the required gate voltage is applied. Finally, when the gate voltage is turned off, the current no longer flows, and the transistor is deactivated. The IPD85P04P4L06ATMA1 MOSFET is an excellent choice for a variety of automotive and industrial applications which require low power dissipation and improved efficiency. It provides very low leakage currents and low on-state resistance, making it ideal for power management and switching. Furthermore, this N-channel MOSFET is also suitable for pulse and continuous operations, making it useful for a variety of applications, including DC-DC, voltage regulation, and incandescent lighting. As such, this high-performance transistor is a great choice for automotive and industrial applications which require low power dissipation and improved efficiency.

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