IPD80R1K4CEBTMA1

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The MOSFET (Metal Oxide Semiconductor Field Effect Transistor), IPD80R1K4CEBTMA1 being a typical example, is a three-terminal semiconductor device widely used in many different applications. Its name is derived from its specialised function, which is to modulate the conductance of an output current to or from its gate terminal, by means of an input voltage or current applied to one of its other terminals. In this way, it effectively allows for the regulation of the current flow, and in the case of the IPD80R1K4CEBTMA1, the current is regulated with a mode of enhancement type operation.

The IPD80R1K4CEBTMA1 is a single MOSFET with a dual drain, which means that it has two output p-channel junction field-effect transistors that are connected to its two drain terminals. This is a typical part of the MOSFET, as it allows for two separate output transactional signals to be applied to the output encapsulated in a single package. The IPD80R1K4CEBTMA1 also has an N-channel source, which allows for the source current to be electrically connected to the drain current.

The IPD80R1K4CEBTMA1 MOSFET also comes with an integrated gate to source diode, which allows for a current to flow from the gate to the source terminal and then to the drain terminals. This diode allows for the control of the output current with a relatively low voltage level on the gate terminal of the device, which is very useful when used in certain types of applications. It also provides a protection mechanism, as this diode can prevent the MOSFET from backward biasing, which can cause damage to the device.

The IPD80R1K4CEBTMA1 has a P-channel enhancement mode operation and is capable of operating at a voltage range of up to 80 volts. It has a maximum on-state drain current of 1A and can handle an avalanche energy rating of up to 5mJ. The device also has an On-resistance of 85 milliohms at 4.5V, which makes it a great choice for low voltage, low power applications such as consumer electronics. Moreover, it is also very useful in motor control applications, where its stable operation at higher temperatures is required.

In general, the IPD80R1K4CEBTMA1 is a versatile, reliable and cost-efficient MOSFET, which can be used in many different applications. Its versatile operating voltage range and low On-resistance make it suitable for applications in low power, low voltage consumer applications and motor control. Additionally, its integrated gate to source diode makes it suitable for applications in which protection against backward biasing is required. As such, the IPD80R1K4CEBTMA1 can be used in a wide range of applications, from consumer electronics and motor control to power supply and signal routing.

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