IPD80R600P7ATMA1 Discrete Semiconductor Products |
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Allicdata Part #: | IPD80R600P7ATMA1TR-ND |
Manufacturer Part#: |
IPD80R600P7ATMA1 |
Price: | $ 0.54 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 800V 8A TO252-3 |
More Detail: | N-Channel 800V 8A (Tc) 60W (Tc) Surface Mount PG-T... |
DataSheet: | IPD80R600P7ATMA1 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.48971 |
Vgs(th) (Max) @ Id: | 3.5V @ 170µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | PG-TO252-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 60W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 570pF @ 500V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Series: | CoolMOS™ P7 |
Rds On (Max) @ Id, Vgs: | 600 mOhm @ 3.4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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.IPD80R600P7ATMA1 is a common product in transistors and FETS, MOSFETs singles. It can be used in various application fields and is capable of working with different principles. The IPD80R600P7ATMA1 provides fast switching operations and offers high breakdown voltage, high frequency power control and low power loss.
The IPD80R600P7ATMA1 application field can vary from high power 100kHz amplifiers to high speed Gigabit Ethernet applications. It is an ideal solution for those who need a solution that can handle high frequency applications with the fast switching speeds. In addition, its extremely high frequency handling capability and low power loss are also beneficial features.
The working principle of the IPD80R600P7ATMA1 is based on its construction. It consists of two MOSFETs; one is N-channel MOSFET and the other is P-channel MOSFET. The gate of the N-channel MOSFET is connected to the drain of the P-channel MOSFET and the source of the N-channel MOSFET is connected to the gate of the P-channel MOSFET. When a signal is applied between the gate and the drain of the N-channel MOSFET, the current from this signal is diverted from the P-channel MOSFET to the N-channel MOSFET. This process is known as self N-channel MOSFET pull-up.
The IPD80R600P7ATMA1’s power handling capability has two main factors- the forward voltage of the device and the reverse voltage of the device. The forward voltage of the device dictates how much power it can handle at a given current level. The reverse voltage of the device determines the maximum voltage level it can be exposed to during operation. Both of these parameters are important since they affect the power handling capability of the circuit.
The IPD80R600P7ATMA1 also features fast switching. This can be used in high speed applications such as data transfer, signal processing and video applications. The fast switching of the device helps to minimize power losses and increase the efficiency of the circuit. It also minimizes the effects of electromagnetic interference on nearby circuits and devices.
Finally, the IPD80R600P7ATMA1 also has a high breakdown voltage. This is essential for applications such as motor drive, power scaling and motor speed controls, as it allows for the effective control of high voltage/current drives. It also helps to reduce the risk of catastrophic failures.
In summary, the IPD80R600P7ATMA1 is a powerful device that can handle applications with high frequency and high power. It offers fast switching capability, high breakdown voltage and low power loss. It is ideal for applications where fast switching and high frequency power control are required.
The specific data is subject to PDF, and the above content is for reference
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