Allicdata Part #: | IPD80R360P7ATMA1TR-ND |
Manufacturer Part#: |
IPD80R360P7ATMA1 |
Price: | $ 0.83 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 800V 13A TO252-3 |
More Detail: | N-Channel 800V 13A (Tc) 84W (Tc) Surface Mount PG-... |
DataSheet: | IPD80R360P7ATMA1 Datasheet/PDF |
Quantity: | 2500 |
2500 +: | $ 0.75048 |
Vgs(th) (Max) @ Id: | 3.5V @ 280µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | PG-TO252-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 84W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 930pF @ 500V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
Series: | CoolMOS™ P7 |
Rds On (Max) @ Id, Vgs: | 360 mOhm @ 5.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 13A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The IPD80R360P7ATMA1 is a power MOSFET that belongs to the family of field-effect transistors (FETs). Field effect transistors, or FETs as they are more commonly known, are commonly used in a variety of applications and are commonly used to amplify and switch electrical signals. As the name implies, a field-effect transistor is a transistor which relies on the strength of an electric field in order to switch and control a current. Unlike bipolar transistors, field-effect transistors have very low power requirements and can operate at high frequencies. The IPD80R360P7ATMA1 is a single n-channel MOSFET, meaning it is a type of field-effect transistor that has a single channel of conducting electricity.
The IPD80R360P7ATMA1 is widely used in many applications due to its advantages over other types of power MOSFETs. It is extremely efficient, with excellent thermal, electrical, and switching characteristics. In addition to this, the IPD80R360P7ATMA1 is extremely reliable and durable, allowing it to operate in harsh and demanding environments. Finally, it is also very cost-effective, making it a popular choice in many different applications.
The working principle of the IPD80R360P7ATMA1 is based on the same principles as other field-effect transistors, which rely on an electric field to switch and control a current. When a positive voltage is applied to the gate of the MOSFET, it allows electrons to travel from the source to the drain. This flow of electrons from the source to the drain creates a channel in the MOSFET, and this channel is then driven by the voltage applied to the gate. In this way, the IPD80R360P7ATMA1 is able to switch the current from the source to the drain, allowing for precise control of the current. This precise control makes the IPD80R360P7ATMA1 a popular choice for many different applications.
The IPD80R360P7ATMA1 is commonly used in applications where high frequency, low power, and precise control are required, such as in DC-DC converters and power supplies. The IPD80R360P7ATMA1 is also used in motor control applications due to its ability to switch and control large currents. In addition to this, the IPD80R360P7ATMA1 is also used in audio amplifiers and other audio-related applications due to its ability to switch between high frequency and low frequency signals. Finally, the IPD80R360P7ATMA1 is also commonly used in high voltage applications due to its robustness and durability.
In conclusion, the IPD80R360P7ATMA1 is a versatile power MOSFET that is suitable for a variety of applications due to its efficiency, reliability, and cost-effectiveness. Its working principle is based on the same principles as other FETs, which rely on an electric field to switch and control a current. The IPD80R360P7ATMA1 is commonly used in DC-DC converters, power supplies, motor control applications, audio amplifiers, and other audio-related applications due to its ability to switch and control large currents, switch between high frequency and low frequency signals, and withstand high voltages.
The specific data is subject to PDF, and the above content is for reference
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