IPD80R360P7ATMA1 Allicdata Electronics
Allicdata Part #:

IPD80R360P7ATMA1TR-ND

Manufacturer Part#:

IPD80R360P7ATMA1

Price: $ 0.83
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 800V 13A TO252-3
More Detail: N-Channel 800V 13A (Tc) 84W (Tc) Surface Mount PG-...
DataSheet: IPD80R360P7ATMA1 datasheetIPD80R360P7ATMA1 Datasheet/PDF
Quantity: 2500
2500 +: $ 0.75048
Stock 2500Can Ship Immediately
$ 0.83
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 280µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 84W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 500V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Series: CoolMOS™ P7
Rds On (Max) @ Id, Vgs: 360 mOhm @ 5.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IPD80R360P7ATMA1 is a power MOSFET that belongs to the family of field-effect transistors (FETs). Field effect transistors, or FETs as they are more commonly known, are commonly used in a variety of applications and are commonly used to amplify and switch electrical signals. As the name implies, a field-effect transistor is a transistor which relies on the strength of an electric field in order to switch and control a current. Unlike bipolar transistors, field-effect transistors have very low power requirements and can operate at high frequencies. The IPD80R360P7ATMA1 is a single n-channel MOSFET, meaning it is a type of field-effect transistor that has a single channel of conducting electricity.

The IPD80R360P7ATMA1 is widely used in many applications due to its advantages over other types of power MOSFETs. It is extremely efficient, with excellent thermal, electrical, and switching characteristics. In addition to this, the IPD80R360P7ATMA1 is extremely reliable and durable, allowing it to operate in harsh and demanding environments. Finally, it is also very cost-effective, making it a popular choice in many different applications.

The working principle of the IPD80R360P7ATMA1 is based on the same principles as other field-effect transistors, which rely on an electric field to switch and control a current. When a positive voltage is applied to the gate of the MOSFET, it allows electrons to travel from the source to the drain. This flow of electrons from the source to the drain creates a channel in the MOSFET, and this channel is then driven by the voltage applied to the gate. In this way, the IPD80R360P7ATMA1 is able to switch the current from the source to the drain, allowing for precise control of the current. This precise control makes the IPD80R360P7ATMA1 a popular choice for many different applications.

The IPD80R360P7ATMA1 is commonly used in applications where high frequency, low power, and precise control are required, such as in DC-DC converters and power supplies. The IPD80R360P7ATMA1 is also used in motor control applications due to its ability to switch and control large currents. In addition to this, the IPD80R360P7ATMA1 is also used in audio amplifiers and other audio-related applications due to its ability to switch between high frequency and low frequency signals. Finally, the IPD80R360P7ATMA1 is also commonly used in high voltage applications due to its robustness and durability.

In conclusion, the IPD80R360P7ATMA1 is a versatile power MOSFET that is suitable for a variety of applications due to its efficiency, reliability, and cost-effectiveness. Its working principle is based on the same principles as other FETs, which rely on an electric field to switch and control a current. The IPD80R360P7ATMA1 is commonly used in DC-DC converters, power supplies, motor control applications, audio amplifiers, and other audio-related applications due to its ability to switch and control large currents, switch between high frequency and low frequency signals, and withstand high voltages.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "IPD8" Included word is 26
Part Number Manufacturer Price Quantity Description
IPD80R2K8CEBTMA1 Infineon Tec... 0.0 $ 1000 MOSFET N-CH 800V 1.9A TO2...
IPD80R1K4CEBTMA1 Infineon Tec... 0.0 $ 1000 MOSFET N-CH 800V 3.9A TO2...
IPD80R1K0CEBTMA1 Infineon Tec... 0.0 $ 1000 MOSFET N-CH 800V 5.7A TO2...
IPD80R450P7ATMA1 Infineon Tec... 0.67 $ 1000 MOSFET N-CH 800V 11A DPAK...
IPD80N06S3-09 Infineon Tec... -- 1000 MOSFET N-CH 55V 80A TO252...
IPD80R4K5P7ATMA1 Infineon Tec... 0.22 $ 1000 MOSFET N-CH 800V 1.5A DPA...
IPD80R1K0CEATMA1 Infineon Tec... 0.49 $ 1000 MOSFET N-CH 800V 5.7A TO2...
IPD80R360P7ATMA1 Infineon Tec... 0.83 $ 2500 MOSFET N-CH 800V 13A TO25...
IPD80R280P7ATMA1 Infineon Tec... 1.06 $ 1000 MOSFET N-CH 800V 17A TO25...
IPD80R2K8CEATMA1 Infineon Tec... 0.3 $ 2500 MOSFET N-CH 800V 1.9A TO2...
IPD80R1K2P7ATMA1 Infineon Tec... -- 1000 MOSFET N-CH 800V 4.5A TO2...
IPD80R750P7ATMA1 Infineon Tec... 0.47 $ 1000 MOSFET N-CH 800V 7A TO252...
IPD80R3K3P7ATMA1 Infineon Tec... 0.23 $ 1000 MOSFET N-CH 800V 1.9A TO2...
IPD800N06NGBTMA1 Infineon Tec... 0.0 $ 1000 MOSFET N-CH 60V 16A TO-25...
IPD80R1K4CEATMA1 Infineon Tec... 0.4 $ 5000 MOSFET N-CH 800V 3.9A TO2...
IPD80R2K4P7ATMA1 Infineon Tec... 0.27 $ 1000 MOSFET N-CH 800V 2.5A TO2...
IPD80R1K4P7ATMA1 Infineon Tec... 0.32 $ 1000 MOSFET N-CH 800V 4A DPAKN...
IPD80R900P7ATMA1 Infineon Tec... 0.41 $ 1000 MOSFET N-CH 800V 6A TO252...
IPD80P03P4L07ATMA1 Infineon Tec... 0.46 $ 1000 MOSFET P-CH 30V 80A TO252...
IPD80N04S306ATMA1 Infineon Tec... -- 1000 MOSFET N-CH 40V 90A TO252...
IPD80N04S306BATMA1 Infineon Tec... 0.41 $ 1000 MOSFET N-CHANNEL_30/40V
IPD85P04P407ATMA1 Infineon Tec... -- 1000 MOSFET N-CH TO252-3P-Chan...
IPD85P04P4L06ATMA1 Infineon Tec... -- 1000 MOSFET N-CH TO252-3P-Chan...
IPD80R600P7ATMA1 Infineon Tec... 0.54 $ 1000 MOSFET N-CH 800V 8A TO252...
IPD80R2K0P7ATMA1 Infineon Tec... 0.29 $ 5000 MOSFET N-CH 800V 3A TO252...
IPD80R2K7C3AATMA1 Infineon Tec... 0.55 $ 1000 MOSFET N-CH TO252-3
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics