IPD80R900P7ATMA1

Vgs(th) (Max) @ Id:	3.5V @ 110µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	PG-TO252-3
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	45W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	350pF @ 500V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	15nC @ 10V
Series:	CoolMOS™ P7
Rds On (Max) @ Id, Vgs:	900 mOhm @ 2.2A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	6A (Tc)
Drain to Source Voltage (Vdss):	800V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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IPD80R900P7ATMA1 is a vertical drain through-hole insulated-gate field-effect transistor (IGFET), more commonly referred to as MOSFET. This component is designed for applications that require a fast switching speed and high power handling capability.MOSFET is a type of solid-state switch that is commonly used in various applications such as power converters, digital logic, integrated circuits, and other power switching devices. They are often used in place of mechanical and conventional junction-field-effect transistors (JFETs) due to their higher power switching performance and reliability.The IPD80R900P7ATMA1 is a vertically-integrated drain (VID) FET. This type of transistor is a unique variation of a vertical MOSFET and is characterized by a series of top-down layers that are joined together by a vertical insulation oxide layer. These layers vary in thickness and are designed for a specific purpose.The IPD80R900P7ATMA1 is designed for high frequency, low on-resistance, and high power applications. Its high frequency characteristics make it well-suited for use in radio frequency amplifiers and other radio frequency applications. It also has excellent high current handling capability, making it ideal for power converters, switching regulators, and other power management applications.The IPD80R900P7ATMA1 consists of an insulation layer between its two terminals. The gate terminal is connected to the source terminal, allowing current to pass between the two terminals. When a voltage is applied to the gate of the transistor, it changes the resistance of the source and drain, enabling it to act as an adjustable resistor. This allows it to be used as a switch, allowing or blocking current flow depending on the level of the applied voltage. In addition, the output current is proportional to the applied voltage, allowing the transistor to be used in voltage regulation and current-limiting circuits.The IPD80R900P7ATMA1 is an exceptionally versatile and reliable device that is used in a wide variety of applications. Its high switching speed and power handling capability make it well-suited for use in power converters, switching regulators, and radio frequency amplifiers. Its low on-resistance and high current handling capability make it well-suited for use in current-limiting circuits and voltage regulation. Furthermore, its insulation layer makes it ideal for use in applications that require better electrical isolation.

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