IPD80R1K0CEBTMA1 Allicdata Electronics
Allicdata Part #:

IPD80R1K0CEBTMA1TR-ND

Manufacturer Part#:

IPD80R1K0CEBTMA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 800V 5.7A TO252-3
More Detail: N-Channel 800V 5.7A (Tc) 83W (Tc) Surface Mount TO...
DataSheet: IPD80R1K0CEBTMA1 datasheetIPD80R1K0CEBTMA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 83W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 785pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
Series: CoolMOS™
Rds On (Max) @ Id, Vgs: 950 mOhm @ 3.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tape & Reel (TR) 
Description

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IPD80R1K0CEBTMA1 is a silicon transistor, also known as a field-effect transistor. It has been designed for use in various applications. In this article, we will discuss the application field and working principle of the IPD80R1K0CEBTMA1.The IPD80R1K0CEBTMA1 is a 2-terminal depletion-mode or enhancement-mode MOSFET that is designed for use in high-frequency power switching and amplifier applications. The device has a low on-state resistance of 1KΩ and a maximum drain current of 15A. The IPD80R1K0CEBTMA1 also has a low threshold voltage of 3V and a low gate capacitance of 14pF. All of these features make this MOSFET an ideal choice for applications that require high switching speed and efficiency.The IPD80R1K0CEBTMA1 is an enhancement-mode transistor, which means that it requires an application of a positive voltage to the gate in order to turn on the drain current. The MOSFET has an extremely high input impedance, which means that it can be used as an amplifier for driving other components. Additionally, the high voltage tolerance of up to 20V makes the IPD80R1K0CEBTMA1 an excellent choice for applications that require high voltage levels.The IPD80R1K0CEBTMA1 can be used in a variety of applications, including switching power supplies, DC-DC converters, motor control, and audio amplifiers. The low on-state resistance and high switching speed make the IPD80R1K0CEBTMA1 ideally suited for these applications. The device also has a wide range of supply voltage ratings and a high thermal stability. This makes it an excellent choice for applications that require a reliable and robust operation.In summary, the IPD80R1K0CEBTMA1 is a silicon transistor, specifically a 2-terminal depletion-mode or enhancement-mode MOSFET. It is designed for use in high-frequency power switching, DC-DC converters, motor control, and audio amplifiers. The device has a low on-state resistance of 1KΩ and a maximum drain current of 15A. Additionally, the IPD80R1K0CEBTMA1 has a low threshold voltage of 3V, a low gate capacitance of 14pF, and a high input impedance. The wide range of supply voltage ratings and high thermal stability make this device an excellent choice for various applications that require a reliable and robust operation.

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