Allicdata Part #: | IPD80R1K0CEBTMA1TR-ND |
Manufacturer Part#: |
IPD80R1K0CEBTMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 800V 5.7A TO252-3 |
More Detail: | N-Channel 800V 5.7A (Tc) 83W (Tc) Surface Mount TO... |
DataSheet: | IPD80R1K0CEBTMA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3.9V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 83W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 785pF @ 100V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 31nC @ 10V |
Series: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 950 mOhm @ 3.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.7A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
IPD80R1K0CEBTMA1 is a silicon transistor, also known as a field-effect transistor. It has been designed for use in various applications. In this article, we will discuss the application field and working principle of the IPD80R1K0CEBTMA1.The IPD80R1K0CEBTMA1 is a 2-terminal depletion-mode or enhancement-mode MOSFET that is designed for use in high-frequency power switching and amplifier applications. The device has a low on-state resistance of 1KΩ and a maximum drain current of 15A. The IPD80R1K0CEBTMA1 also has a low threshold voltage of 3V and a low gate capacitance of 14pF. All of these features make this MOSFET an ideal choice for applications that require high switching speed and efficiency.The IPD80R1K0CEBTMA1 is an enhancement-mode transistor, which means that it requires an application of a positive voltage to the gate in order to turn on the drain current. The MOSFET has an extremely high input impedance, which means that it can be used as an amplifier for driving other components. Additionally, the high voltage tolerance of up to 20V makes the IPD80R1K0CEBTMA1 an excellent choice for applications that require high voltage levels.The IPD80R1K0CEBTMA1 can be used in a variety of applications, including switching power supplies, DC-DC converters, motor control, and audio amplifiers. The low on-state resistance and high switching speed make the IPD80R1K0CEBTMA1 ideally suited for these applications. The device also has a wide range of supply voltage ratings and a high thermal stability. This makes it an excellent choice for applications that require a reliable and robust operation.In summary, the IPD80R1K0CEBTMA1 is a silicon transistor, specifically a 2-terminal depletion-mode or enhancement-mode MOSFET. It is designed for use in high-frequency power switching, DC-DC converters, motor control, and audio amplifiers. The device has a low on-state resistance of 1KΩ and a maximum drain current of 15A. Additionally, the IPD80R1K0CEBTMA1 has a low threshold voltage of 3V, a low gate capacitance of 14pF, and a high input impedance. The wide range of supply voltage ratings and high thermal stability make this device an excellent choice for various applications that require a reliable and robust operation.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
IPD80R2K8CEBTMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 800V 1.9A TO2... |
IPD80R1K4CEBTMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 800V 3.9A TO2... |
IPD80R1K0CEBTMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 800V 5.7A TO2... |
IPD80R450P7ATMA1 | Infineon Tec... | 0.67 $ | 1000 | MOSFET N-CH 800V 11A DPAK... |
IPD80N06S3-09 | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 80A TO252... |
IPD80R4K5P7ATMA1 | Infineon Tec... | 0.22 $ | 1000 | MOSFET N-CH 800V 1.5A DPA... |
IPD80R1K0CEATMA1 | Infineon Tec... | 0.49 $ | 1000 | MOSFET N-CH 800V 5.7A TO2... |
IPD80R360P7ATMA1 | Infineon Tec... | 0.83 $ | 2500 | MOSFET N-CH 800V 13A TO25... |
IPD80R280P7ATMA1 | Infineon Tec... | 1.06 $ | 1000 | MOSFET N-CH 800V 17A TO25... |
IPD80R2K8CEATMA1 | Infineon Tec... | 0.3 $ | 2500 | MOSFET N-CH 800V 1.9A TO2... |
IPD80R1K2P7ATMA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 800V 4.5A TO2... |
IPD80R750P7ATMA1 | Infineon Tec... | 0.47 $ | 1000 | MOSFET N-CH 800V 7A TO252... |
IPD80R3K3P7ATMA1 | Infineon Tec... | 0.23 $ | 1000 | MOSFET N-CH 800V 1.9A TO2... |
IPD800N06NGBTMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 60V 16A TO-25... |
IPD80R1K4CEATMA1 | Infineon Tec... | 0.4 $ | 5000 | MOSFET N-CH 800V 3.9A TO2... |
IPD80R2K4P7ATMA1 | Infineon Tec... | 0.27 $ | 1000 | MOSFET N-CH 800V 2.5A TO2... |
IPD80R1K4P7ATMA1 | Infineon Tec... | 0.32 $ | 1000 | MOSFET N-CH 800V 4A DPAKN... |
IPD80R900P7ATMA1 | Infineon Tec... | 0.41 $ | 1000 | MOSFET N-CH 800V 6A TO252... |
IPD80P03P4L07ATMA1 | Infineon Tec... | 0.46 $ | 1000 | MOSFET P-CH 30V 80A TO252... |
IPD80N04S306ATMA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 40V 90A TO252... |
IPD80N04S306BATMA1 | Infineon Tec... | 0.41 $ | 1000 | MOSFET N-CHANNEL_30/40V |
IPD85P04P407ATMA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH TO252-3P-Chan... |
IPD85P04P4L06ATMA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH TO252-3P-Chan... |
IPD80R600P7ATMA1 | Infineon Tec... | 0.54 $ | 1000 | MOSFET N-CH 800V 8A TO252... |
IPD80R2K0P7ATMA1 | Infineon Tec... | 0.29 $ | 5000 | MOSFET N-CH 800V 3A TO252... |
IPD80R2K7C3AATMA1 | Infineon Tec... | 0.55 $ | 1000 | MOSFET N-CH TO252-3 |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...