IPD80R2K4P7ATMA1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IPD80R2K4P7ATMA1 is a high-efficiency single N-channel MOSFET that was designed and produced by Infineon Technologies. It is mainly used in power management, especially in battery and automotive power management applications. The devices offer a variety of features that make it ideal for those applications, including high-efficiency operation, low on-state resistance, fast switching speed, and low gate charge. This article will discuss the application field and working principle of the IPD80R2K4P7ATMA1.

The IPD80R2K4P7ATMA1 is mainly used in power management, especially in battery and automotive power management applications. It has an excellent feature set that makes it ideal for low-power applications such as on/off control of high operating currents. It is capable of operating at currents up to 10A and is highly efficient, offering low on-state resistance values of just 0.171Ω. It also has a fast switching speed of just 41ns, and a low gate charge of just 5nC. This makes it an ideal choice for battery and automotive applications where low power consumption is important.

The IPD80R2K4P7ATMA1 is a single N-channel MOSFET. It has an internal body diode that is used to control the direction of the current. When the gate voltage is low, the body diode is in high resistance mode and the MOSFET acts as an open switch, blocking current flow. When the gate voltage is high, the body diode is in low resistance mode and the MOSFET acts as a closed switch, allowing current to flow. The MOSFET has a low threshold voltage of 0.75 volts, which ensures that it can be used in low-voltage systems. The MOSFET also has a low ON resistance, which helps to reduce power losses and optimize efficiency.

The IPD80R2K4P7ATMA1 is designed to be a highly efficient device with a wide variety of features that make it ideal for battery and automotive power management applications. It has an excellent feature set which makes it ideal for low-power applications such as on/off control of high operating currents. It is capable of operating at currents up to 10A and is highly efficient, offering low on-state resistance values of just 0.171Ω. It also has a fast switching speed of just 41ns, and a low gate charge of just 5nC. This makes it an ideal choice for battery and automotive applications where low power consumption is important.

When it comes to reliability, the IPD80R2K4P7ATMA1 is excellent. It has a wide operating temperature range from -55 to +150 degrees Celsius and can handle reverse bias operation. Its gate oxide strength is also rated for up to 150 volts of gate-source breakdown voltage, making it highly reliable. The device is RoHS compliant and is produced with high quality manufacturing materials and processes, ensuring its reliability and durability in extreme conditions.

In conclusion, the IPD80R2K4P7ATMA1 is an excellent single N-channel MOSFET that was designed and produced by Infineon Technologies. It is mainly used in power management, especially in battery and automotive power management applications. It has an excellent feature set that makes it ideal for low-power applications such as on/off control of high operating currents. It is capable of operating at currents up to 10A and is highly efficient, offering low on-state resistance values of just 0.171Ω. It also has a fast switching speed of just 41ns, and a low gate charge of just 5nC. This makes it an ideal choice for battery and automotive applications where low power consumption is important.

The specific data is subject to PDF, and the above content is for reference