Allicdata Part #: | IPD80R3K3P7ATMA1TR-ND |
Manufacturer Part#: |
IPD80R3K3P7ATMA1 |
Price: | $ 0.23 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 800V 1.9A TO252-3 |
More Detail: | N-Channel 800V 1.9A (Tc) 18W (Tc) Surface Mount PG... |
DataSheet: | IPD80R3K3P7ATMA1 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.21399 |
Vgs(th) (Max) @ Id: | 3.5V @ 30µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | PG-TO252-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 18W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 120pF @ 500V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 5.8nC @ 10V |
Series: | CoolMOS™ P7 |
Rds On (Max) @ Id, Vgs: | 3.3 Ohm @ 590mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.9A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The IPD80R3K3P7ATMA1 is a high performance and highly efficient low-voltage transistor used in a variety of applications. It is commonly found in consumer electronics, computers, and other electrical devices. This article will discuss the application field and working principle of the IPD80R3K3P7ATMA1.
The IPD80R3K3P7ATMA1 is a field-effect transistor (FET) and is classified as a single-gate device. It is commonly used as a switch to control the flow of electricity between two points. The device has a number of internal structures and components, including a source, drain, gate, and body contact region. The source and drain contacts are connected to the source and drain regions, respectively. When a voltage is applied to the gate terminal, a current is allowed to pass through the source and drain contacts.
The IPD80R3K3P7ATMA1, due to its low voltage nature, is widely used in battery-powered and low-power devices. It is designed to minimize power dissipation while providing fast switching speeds. This makes it ideal for use in digital logic circuits, such as logic gates and counters, as well as analog circuits, such as amplifiers and oscillators. The IPD80R3K3P7ATMA1 is also commonly used in power management and signal routing applications, such as inverters and converters.
The working principle of the IPD80R3K3P7ATMA1 is based on the concept of controllable conduction. When a voltage is applied to the gate terminal, an electric field is generated in the gate region. This electric field modulates the conductivity of the material between the source and drain regions and allows or prevents current to flow, depending on the voltage applied to the gate. When the voltage at the gate is zero, there is no current flow; this is known as the ‘OFF’ state. Conversely, when the gate voltage is high, current can flow freely; this is known as the ‘ON’ state.
The IPD80R3K3P7ATMA1 is a versatile device and can be used in a variety of electronic and digital applications. It is suitable for use in power management, signal routing, logic circuits, analog circuits, and other low-power and battery-powered applications. Its high-efficiency and low-voltage nature make it an ideal choice for a variety of circuit designs.
The specific data is subject to PDF, and the above content is for reference
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