Allicdata Part #: | IPD80R1K4P7ATMA1TR-ND |
Manufacturer Part#: |
IPD80R1K4P7ATMA1 |
Price: | $ 0.32 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 800V 4A DPAK |
More Detail: | N-Channel 800V 4A (Tc) 32W (Tc) Surface Mount TO-2... |
DataSheet: | IPD80R1K4P7ATMA1 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.28826 |
Vgs(th) (Max) @ Id: | 3.5V @ 700µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 32W (Tc) |
FET Feature: | Super Junction |
Input Capacitance (Ciss) (Max) @ Vds: | 250pF @ 500V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 10nC @ 10V |
Series: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 1.4 Ohm @ 1.4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The IPD80R1K4P7ATMA1, also known as an 80V Single N-Channel PowerTrench® MOSFET, is an integral part of standard transistor technology. It is commonly used in applications that involve high-efficiency power switch applications, such as DC-DC conversion, motor control, and motor driving. It is an ideal choice for designs that require high voltage, high current and high efficiency. This article will explore the application fields and working principle of the IPD80R1K4P7ATMA1.
The IPD80R1K4P7ATMA1 is a Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) which belongs to the N-channel MOSFET family. It is a voltage-controlled field-effect transistor that utilizes an insulated gate to create and control a channel between the source and drain. The insulated gate allows for a controlled current to flow through the channel. The IPD80R1K4P7ATMA1 is designed with a maximum drain-source breakdown voltage of 80 volts and a maximum drain current of 4.7 amps.
The IPD80R1K4P7ATMA1 is widely used in applications that involve efficient and high-power switching, such as DC-DC conversion and motor control. In DC-DC conversion, it is used to switch current from one voltage level to another. This makes it useful for applications like voltage converters, inverters, and solar regulators. It also has applications in motor control, as it is often used to control the speed and direction of motors. It is also used in motor drives, as it allows for smooth motor control and current sensing.
The working principle of the IPD80R1K4P7ATMA1 follows the standard operation of an insulated gate FET. When a voltage is applied to the gate, the positive charges force the electrons at the channel to move away, thus creating an induced channel between the drain and the source. This channel is used to pass the current between the drain and source, depending on the amount of current being passed. The amount of current that is being passed can be adjusted by varying the gate voltage.
The IPD80R1K4P7ATMA1 is a high-efficiency, high-power switch, making it an ideal choice for applications that require a reliable and efficient switch. It is capable of achieving high-efficiency switching and can handle high load currents and voltages. It is also easy to use, as its use only requires minimal manual adjustment.
In conclusion, the IPD80R1K4P7ATMA1 is a reliable, efficient, and high-power switch that is used in applications such as DC-DC conversion, motor control, and motor driving. Its working principle follows the standard functioning of an insulated gate FET and allows for the passing of current between the drain and source. It is an ideal choice for any system that requires high voltage and current switching, making it a popular choice for a wide variety of applications.
The specific data is subject to PDF, and the above content is for reference
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