IPD80N06S3-09

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The IPD80N06S3-09 is a SMART power MOSFET manufactured by Infineon Technologies. It is designed to provide an optimized, versatile, and cost effective solution to address a variety of design requirements. The IPD80N06S3-09 is offered in the PQFN package, which is an excellent choice for applications requiring a compact size, low weight, and high performance.

The IPD80N06S3-09 is suitable for use in high voltage and power applications such as switched mode power supplies, solar inverters, three-phase motor control, switched mode power, and general purpose electronic applications.

The IPD80N06S3-09 features Parallel Positive Body Diode technology, which allows for higher current capability with lower losses and greater power efficiency. The device offers an optimized current flow and low on-state resistance. The low gate charge and low gate resistance of the IPD80N06S3-09 makes it suitable for applications that require fast switching times and a low total power consumption.

The IPD80N06S3-09 is a single-ended N-channel enhancement mode MOSFET. This device is designed to be driven by a single gate that is capable of sourcing or sinking current. The device has a maximum breakdown voltage of 800V, a maximum drain-source voltage of 60V, and a maximum drain current of 80A. The on-state resistance of the IPD80N06S3-09 is 0.197 Ω, and the maximum gate-source voltage is ±20V.

The working principle of the IPD80N06S3-09 is based on the principles of Metal Oxide Semiconductor Field Effect Transistor (MOSFET). This type of transistor is a voltage-controlled device that is composed of a semiconductor material and an insulated gate. When a voltage is applied to the gate, it creates an electric field that attracts charge carriers from the semiconductor material and onto the gate. This in turn, creates a conductive path for current to flow between the source and the drain.

The IPD80N06S3-09 is designed to operate efficiently and robustly in a variety of high voltage applications. It offers an optimized current flow, low gate charge, low on-state resistance, a high breakdown voltage, and an extended safe operational temperature range of -40°C to 150°C.

The IPD80N06S3-09 is an ideal solution for a variety of applications including switched mode power supplies, motor control, general purpose electronics, and solar inverters. It offers an optimized, versatile and cost effective solution for designers looking for an efficient and robust power MOSFET.

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