IPD80R4K5P7ATMA1

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IPD80R4K5P7ATMA1 is a field-effect transistor (FET) from Infineon Technologies. This type of transistor is a single-field effect (DMOS) transistor with a long channel length of about 45nm. It has very low gate charge, low resistance and high-speed switches. It is also able to survive up to 40V reverse breakdown.

Application Field

IPD80R4K5P7ATMA1 has many different applications. With its low gate charge and extremely low resistance, it can be used in various high-frequency switching circuits. Its wide range of breakdown voltage makes it possible to use it in high-end power applications, such as Automotive, Aerospace, and Industrial. It can also be used in high voltage switching systems and equipment that use high frequencies. Furthermore, it is also suitable for RF applications, such as RF transmitters and receivers. This device is also suitable for medium power applications, such as TV and medical equipment.

Working Principle

IPD80R4K5P7ATMA1 FET operates on the principle of the MOSFET (Metal Oxide Semiconductor Field Effect Transistor). The field-effect is produced when a voltage is applied to the gate. This voltage creates an electric field between the gate and the channel, resulting in a channel current forming between the source and the drain. This channel current is proportional to the applied gate voltage, allowing for precise current control.

The FET is constructed of two layers of semiconductor material (usually silicon) separated by an insulating material called the gate oxide. The gate oxide layer is very thin, usually just a few nanometers thick. When a voltage is applied to the gate, the gate oxide breaks down and allows current to flow between the two layers of silicon. The flow of current between the source and drain is how the FET controls the current.

Because of its design, the FET can be used in many different situations and applications. It is used in audio amplifiers and as a switch in digital circuits. It can be used in switching high power by controlling the current in the gate oxide layer. It is also used in power circuits, such as the speed control for high-powered motors, the dimming of lights, and the regulation of power supplies. It has even been used in the control of temperature in semiconductor wafer manufacturing.

In conclusion, IPD80R4K5P7ATMA1 is a single-field effect transistor from Infineon Technologies with a long channel length of about 45nm. It has low gate charge, low resistance, and high-speed switching which makes it suitable for various power applications and RF applications. The FET has many applications and is able to provide precise current control through the electric field created between the gate and the channel when a voltage is applied.

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