IPG20N06S415ATMA2

Series:	Automotive, AEC-Q101, OptiMOS™
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	2 N-Channel (Dual)
FET Feature:	Standard
Drain to Source Voltage (Vdss):	60V
Current - Continuous Drain (Id) @ 25°C:	20A
Rds On (Max) @ Id, Vgs:	15.5 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:	4V @ 20µA
Gate Charge (Qg) (Max) @ Vgs:	29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	2260pF @ 25V
Power - Max:	50W
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-PowerVDFN
Supplier Device Package:	PG-TDSON-8-4

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IPG20N06S415ATMA2 Application Field and Working Principle

Introduction to IPG20N06S415ATMA2

IPG20N06S415ATMA2 is an advanced inter mid power discrete FET device. It is manufactured by the well-known manufacturer ON Semiconductor. This device is designed to provide high-performance and cost-effective power switching solutions. It is suitable for applications in Automotive, Computer and Industrial Control. This device utilizes N-channel enhancement mode MOSFET (OST) technology. The OST technology is known for its low Rds (on) value and low on-state conduction losses. It is also characterized by its excellent gate threshold voltage and gate overdrive voltage values. With this, the device offers high performance switch for low voltage DC circuits.

Application Field and Working Principle of IPG20N06S415ATMA2

The IPG20N06S415ATMA2 is an ideal solution for Automotive, Computer, and Industrial Control applications. It is used in applications such as general purpose power switching, high-side pre-biased load switching, and low On-resistance level shifting. In Automotive applications, the device can be used as an engine control and actuator unit, fuel injection system, and can also be used as an engine torque control. In this application, the device can accurately switch large amounts of power with small variations in control voltage.In the Computer System applications, the device can be used as an On-board memory and disk drive. It can also be used in motherboard designs, Power Over Ethernet (POE) switching system, and other digital logic systems.In the Industrial Control applications, the device can be used as an HVAC control system, motor control, and process control unit. The device enables precise on-state control of large power demands with limited control voltage variation.In addition to its applications in the field, the IPG20N06S415ATMA2 is also known for its low power loss characteristics. It is capable of dissipating only a small amount of power even under high switching frequencies. This is due to the low gate threshold voltage and the low Rds (on) values. The device is also known for its robustness in working environments. It is capable of operating at high temperatures with minimum power losses. It also has excellent ESD tolerance and wide operating temperature range. In terms of its working principle, the device works by allowing current to pass through the gate of the device when gate voltage reaches the minimum threshold voltage. Current will then travel through the drain to the source, allowing power to be switched. The ON-state resistance of the device is directly proportional to the gate voltage, allowing accurate control over the power flow.

Conclusion

To sum up, the IPG20N06S415ATMA2 is an advanced inter mid power discrete FET device that is manufactured by ON Semiconductor. It is suitable for Automotive, Computer and Industrial Control applications and can be used for a variety of switching applications. The device is known for its low Rds (on) value, low gate threshold voltage, and small power dissipation even at high switching frequencies. It is also capable of operating in a wide range of temperatures and has excellent ESD tolerance. The device works by allowing current to pass through the gate when the gate voltage reaches the threshold voltage. This allows the device to accurately control the power flow.

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