
Allicdata Part #: | IPG20N06S2L50AATMA1-ND |
Manufacturer Part#: |
IPG20N06S2L50AATMA1 |
Price: | $ 0.40 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET 2N-CH 8TDSON |
More Detail: | Mosfet Array 2 N-Channel (Dual) 55V 20A 51W Surfac... |
DataSheet: | ![]() |
Quantity: | 1000 |
5000 +: | $ 0.36115 |
Series: | Automotive, AEC-Q101, OptiMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 55V |
Current - Continuous Drain (Id) @ 25°C: | 20A |
Rds On (Max) @ Id, Vgs: | 50 mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 19µA |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 560pF @ 25V |
Power - Max: | 51W |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | PG-TDSON-8-10 |
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The IPG20N06S2L50AATMA1 is a high-voltage field effect transistor (FET) array, featuring an integrated gate driver, designed to operate in applications requiring Automotive Temperature Grade qualification (AEC-Q101). This device is ideal for applications such as motor drives, industrial inverters, LED drivers and energy metering systems.
The IPG20N06S2L50AATMA1 is a 5A / 100V n-channel FET array, which includes two n-channel FETs and two integrated gate drivers. It features an input hybrid gate construction which helps to reduce EMI noise; a negative temperature coefficient threshold voltage and a fast switching speed along with a high gate-drain peak voltage rating of 150V. The device also has excellent thermal performance and Robust Electrostatic Discharge (ESD) protection of 8KV for the gate terminals and 2KV for the drain terminals.
In addition to its Automotive Temperature Grade qualification, the device also meets the requirements for AEC-Q100 and has UL ratings of 6V for the output and 8V for the gate. This FET array is designed for Power Factor Correction (PFC) applications using either fixed-frequency or resonant switching topologies. It also has a low current consumption and a built-in short-circuit protection to prevent over current.
The IPG20N06S2L50AATMA1 works on the principle of a field effect transistor. A field effect transistor consists of an insulated gate, the source, and the drain. The insulated gate acts as a switch which can be used to control the flow of current between the source and the drain. When a positive voltage is applied to the gate, the device is turned on, allowing conduction between the source and the drain. Conversely, when the gate voltage is removed, the device is off and current is blocked between the source and the drain.
In its application field, the IPG20N06S2L50AATMA1 can be used in industrial motor drives, LED drivers, and energy metering systems. In motor drive applications, the FET array provides a reliable manner of controlling motor direction and speed. In LED driver applications, the device is used to regulate current/voltage through LEDs to ensure stable and efficient operation. In energy metering applications, the FET array is used to control and measure the energy transfer from one point to another.
The IPG20N06S2L50AATMA1 is a powerful solution for applications needing a high-voltage, high-current solution capable of safely managing high-power applications. Through its Automotive Temperature Grade qualification, it offers excellent performance and reliability while providing robust electrostatic discharge protection and low power consumption. The integrated gate driver ensures a fast switching speed and a low gate-drain peak voltage rating, making it ideal for applications such as motor drives, LED drivers, and energy metering systems.
The specific data is subject to PDF, and the above content is for reference
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