
Allicdata Part #: | IPG20N06S4L11AATMA1-ND |
Manufacturer Part#: |
IPG20N06S4L11AATMA1 |
Price: | $ 0.62 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET 2N-CH 8TDSON |
More Detail: | Mosfet Array 2 N-Channel (Dual) 60V 20A 65W Surfac... |
DataSheet: | ![]() |
Quantity: | 1000 |
5000 +: | $ 0.55805 |
Specifications
Series: | Automotive, AEC-Q101, OptiMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 20A |
Rds On (Max) @ Id, Vgs: | 11.2 mOhm @ 17A, 10V |
Vgs(th) (Max) @ Id: | 2.2V @ 28µA |
Gate Charge (Qg) (Max) @ Vgs: | 53nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 4020pF @ 25V |
Power - Max: | 65W |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | PG-TDSON-8-10 |
Description
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The IPG20N06S4L11AATMA1 is a silicon-based power MOSFET array with an integrated signal processor and focus regulated field effect transistor. It is designed for use in high temperature automotive, industrial, and medical environments. This MOSFET array provides superior thermal stability and high current conduction, enabling quick response time and reliability. It is intended for use in the switching or controlled circuits of both inductive and noninductive load applications. This article will discuss the application fields, working principle, and features of the IPG20N06S4L11AATMA1.The IPG20N06S4L11AATMA1 is mainly used in automotive, industrial and medical applications. In automotive applications, it is used in tools and instrumentation, control units, and steering systems. In industrial applications, it is used in fan speed controls, power supplies, and servo motors. In medical applications, the array is used in ultrasound imaging, analyzers, and diagnostic systems. The IPG20N06S4L11AATMA1 works by controlling the voltage that is applied to its drain. Inside the array, there is a signal processor and a field effect transistor that are connected to the drain. The signal processor senses the drain voltage and adjusts the transistor’s gate voltage accordingly. This alters the applied voltage, allowing for precise and consistent control of the voltage that is applied to the drain.The IPG20N06S4L11AATMA1 offers several advantages over other MOSFET arrays. It has a wide temperature operating range of -55°C to 175°C, a low power dissipation of 0.25W, and a low threshold voltage of 0.5V. Its low gate charge allows for quick voltage responses, while its high drain-source breakdown voltage of 20V makes it suitable for use in high voltage applications. Additionally, the array is RoHS compliant and can be used in lead-free soldering processes. The IPG20N06S4L11AATMA1 is available in a variety of packages and levels, including DIP, SIP, SMT, and single-sided die. It has a wide operating temperature range from -55°C to 175°C, a maximum breakdown voltage of 33V, and a maximum drain-source on-resistance of 8.5Ω. The array is also rated for up to 2A of continuous current and up to 4A of peak current, depending on package and level.The IPG20N06S4L11AATMA1 is a reliable, high temperature MOSFET array with integrated signal processing and focus regulated field effect transistor. Its low power dissipation and wide temperature range make it ideal for use in automotive, industrial, and medical applications. Its ability to control voltage accurately and quickly, coupled with its RoHS compliance, makes it a valuable component for a variety of high voltage and high current applications.
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