IPG20N04S412AATMA1

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The IPG20N04S412AATMA1 is a dual N-Channel enhancement mode power field effect transistor, able to operate directly from the high-side and capable of delivering up to 12amps of continuous drain current. This device is offered in the industry-standard SO-8 package and is ideal for dc-dc converters, motor control and high frequency switching applications. This device is designed to operate over an extended voltage range, suitable for a wide range of applications.

The IPG20N04S412AATMA1 is an N-Channel MOSFET array, meaning it is composed of multiple N-Channel MOSFETs that can be used in a circuit configuration to control current and voltage flow through a connected device or circuit. This array is capable of very high switching speeds and ultra-low gate charge capacitances, making it an ideal choice for high-frequency, high-speed switching applications. Depending on the voltage, the IPG20N04S412AATMA1 supports up to on-state drain current ranges of up to 12 amperes, and provides a wide range of input/output resistances.

The IPG20N04S412AATMA1 works by passing electric current between two terminals, the source and drain. When the gate voltage is applied, the electric field between the source and the drain is enhanced and the current flow is increased. This allows the MOSFET to turn on and off quickly, making it ideal for high frequency switching applications. Additionally, the gate voltage can be adjusted to regulate the amount of current passing through the switch, thus controlling the output voltage.

The IPG20N04S412AATMA1 is a versatile component that can be incorporated into a wide range of application fields. Some common applications for this device include industrial automation, automotive, medical, solar energy, audio amplifiers, servers and power supplies. Furthermore, this component is ideal for applications where high-power switching is needed with minimal gate charge, such as dc-dc converters and motor controllers.

The IPG20N04S412AATMA1 is a powerful and highly efficient array that has been developed to meet the rigorous demands of modern electronics. With its extended voltage range and ultra-low gate charge capacitances, this device is ideal for applications where high-speed switching is required. Furthermore, the device can be used in a variety of applications, ranging from industrial automation to audio amplifiers, making it one of the most versatile power MOSFETs on the market.

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