IPG20N06S415AATMA1 Discrete Semiconductor Products

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The IPG20N06S415AATMA1 is a lead (Pb) free, high-speed, low drain-source on-resistance, N-Channel Logic Level Enhancement Mode Power MOSFET. It uses an advanced vertical double-diffused metal-oxide semiconductor process to support its operations and features a low RDS(ON) of 0.5Ω @10V and 0.9Ω @4.5V. This MOSFET also features a low Gate charge of no more than 15 nC, a on-resistance of 4 mΩ, maximum frequency of 6.5 GHz, and a maximum drain current of 20A. This robust power transistor is suitable for use in switching applications such as servers, integrated circuits, HVAC, telecoms, and general power supply applications.

The IPG20N06S415AATMA1 is adjusted through its Drain-to-Source Voltage, Gate Threshold Voltage, and Drain Current. It is also easy to use and configure to its appropriate performance specifications. The MOSFET can be configured and adjusted through its VDS, VGS, and ID parameters. It is also very tolerant of drain-to-source leakage and short circuiting.

This MOSFET has a number of applications including, but not limited to, those mentioned earlier, such as servers, integrated circuits, HVAC, and telecoms. It is also suitable for a wide range of general-purpose applications such as power supply and system circuit boards, LCD backlighting, and LED lighting. This Dual N-Channel MOSFET is also widely used in automotive applications and is suitable for use in high-power circuits, especially those with high in-rush currents, due to its low RDS(ON) and ultra-low on-resistance.

The IPG20N06S415AATMA1 MOSFET is a logic-level enhancement mode device, with a drain-source on-resistance (RDS(ON)) of 0.5Ω @10V and 0.9Ω @4.5V. It works to enhance power efficiency in applications, as well as minimize conduction losses created by physical resistance. When an applied gate voltage is above the threshold of the gate-source junction, the drain-source current (ID) will increase with a small increase in gate voltage until the device enters a saturation region, in which the drain-source connection will act as a low resistance path, allowing increased currents to pass through the device. In this mode, the device’s current gain is large, allowing for increased system efficiency.

This MOSFET also features a very low Gate Charge (QG) of no more than 15 nC, which is essential for fast switching applications, as it ensures fast rise and fall times. The low gate charge also helps in reducing switching losses, allowing for higher system efficiency and greater power density. This makes the IPG20N06S415AATMA1 well suited for applications such as servers, integrated circuits, HVAC, and telecoms, which require a great degree of power efficiency.

In summary, the IPG20N06S415AATMA1 is a high-speed, low drain-source on-resistance, N-Channel Logic Level Enhancement Mode Power MOSFET. It is suitable for a wide range of applications, thanks to its low drain-source on-resistance (RDS(ON)), low gate charge (QG), and high current gain. It is also perfect for switching applications due to its fast rise and fall times. All of these features make the IPG20N06S415AATMA1 an ideal choice for power supply and system circuit boards, LCD backlighting, and LED lighting, as well as servers, integrated circuits and telecoms.

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