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IPG20N04S4L11ATMA1 Application Field and Working Principle

The IPG20N04S4L11ATMA1 is a digital enhancement-mode vertical power MOSFET array. It consists of four independent N-channel power MOSFETs, each with an internal source drain-diode, connected in parallel. This device belongs to the categories of transistors, field effect transistors, and arrays and can be used in a wide range of applications.

Application Field

The IPG20N04S4L11ATMA1 is capable of supplying up to 10 A continuous drain current and 8V maximum drain voltage. It is suitable for a great variety of inverters, switches, and motor drives. The application field includes industrial systems, data communication systems, such as computing, printing, and photocopying machines, home appliance and audio products, such as video-recorders, DVD players, CD players, cassette decks and Hi-Fi systems, as well as digital switching and routing systems and communication systems.

Working Principle

The IPG20N04S4L11ATMA1 is a fourfold power MOSFET array, which is a type of power transistor — a transistor is an electronic device used to control current between two points in an electrical circuit. Power MOSFETs exist as “n-channel” or “p-channel”, which determines their operation. The array is composed of four n-channel power MOSFETs, connected in parallel. In operation, the n-channel MOSFETs will generate a voltage at the gate, which allows the channel to become conductive; current is then allowed to pass through the MOSFET. The two most important parameters to consider when selecting an n-channel power MOSFET are its maximum drain voltage, which determines how much voltage can be passed through the device, and its maximum drain current, which is the maximum amount of current that can be passed.

Conclusion

The IPG20N04S4L11ATMA1 is a digital enhancement-mode vertical power MOSFET array, which is suitable for a wide range of applications. It consists of four independent N-channel power MOSFETs, each with an internal source drain-diode, connected in parallel. In operation, the n-channel MOSFETs will generate a voltage at the gate, which allows the channel to become conductive; current is then allowed to pass through the MOSFET. The two most important parameters of the IPG20N04S4L11ATMA1 are its maximum drain voltage and maximum drain current.

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