IPG20N06S4L11ATMA1

Series:	Automotive, AEC-Q101, OptiMOS™
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	2 N-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	60V
Current - Continuous Drain (Id) @ 25°C:	20A
Rds On (Max) @ Id, Vgs:	11.2 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:	2.2V @ 28µA
Gate Charge (Qg) (Max) @ Vgs:	53nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	4020pF @ 25V
Power - Max:	65W
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-PowerVDFN
Supplier Device Package:	PG-TDSON-8-4

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IPG20N06S4L11ATMA1 is a N-channel logic Level MOSFET, which is an integrated power module design with a combination of 4 individual, medium-voltage, low on-resistance MOSFETs and gate drivers, assembled and tested in a low-profile surface-mount package. This device can be used for an array of applications, including motor control, power management, and lighting control. The IPG20N06S4L11ATMA1 MOSFET is capable of handling a maximum voltage of 20V, and can be used with a logic level gate-drive of 3.3V or 5V, it comes with a typical saturation voltage of 0.8V which is available at a DC current range of 2.7 A to 5 A. This MOSFET also has a maximum operating temperature of 150 °C. An important feature of the IPG20N06S4L11ATMA1 MOSFET is its low on-state resistance, which is measured at 11 mΩ. Low on-state resistance makes the MOSFET capable of handling high currents with minimal voltage drop, making it suitable for applications that require high speed and efficiency.In terms of applications, the IPG20N06S4L11ATMA1 MOSFET can be used in motor control, power management, and lighting control. In motor control applications, it can be used to switch large AC or DC Voltages and currents, making motor control easier and faster. The low on-state resistance of the MOSFET also allows for greater current handling capability, making it suitable for high-power applications. In power management and lighting control, the IPG20N06S4L11ATMA1 MOSFET is capable of switching power supplies, LED drivers and other electronic devices on and off. It has a low on-state resistance, allowing it to handle high amounts of power with minimal energy losses, making it an ideal choice for power management applications. In addition, its wide temperature range makes it suitable for a variety of applications. The working principle of the IPG20N06S4L11ATMA1 MOSFET involves the application of an appropriate voltage to its gate terminal, which causes the MOSFET to attain its low resistance state. This is the result of induced charge between the gate and the source, which creates a depletion region across the conductive channel. This serves to reduce the electrical energy losses, while allowing a high current flow as low voltages are applied. The IPG20N06S4L11ATMA1 MOSFET is also available in an array form, which makes it suitable for a variety of applications. The array form of the MOSFET allows for improved current handling capability, and a wide temperature range prevents the array from overheating. In addition, the array utilizes logic level drive to simplify switching operations and increase system efficiency. Overall, the IPG20N06S4L11ATMA1 MOSFET is a great choice for motor control, power management, and lighting control applications due to its low on-state resistance, wide temperature range, and high-current application capability. It is also available in an array form, which allows for improved efficiency and greater current handling capabilities. This makes the IPG20N06S4L11ATMA1 MOSFET a versatile and reliable power management solution for a variety of applications.

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