
IPG20N10S4L22ATMA1 Discrete Semiconductor Products |
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Allicdata Part #: | IPG20N10S4L22ATMA1TR-ND |
Manufacturer Part#: |
IPG20N10S4L22ATMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET 2N-CH 8TDSON |
More Detail: | Mosfet Array 2 N-Channel (Dual) 100V 20A 60W Surfa... |
DataSheet: | ![]() |
Quantity: | 1000 |
Series: | Automotive, AEC-Q101, OptiMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 20A |
Rds On (Max) @ Id, Vgs: | 22 mOhm @ 17A, 10V |
Vgs(th) (Max) @ Id: | 2.1V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs: | 27nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 1755pF @ 25V |
Power - Max: | 60W |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | PG-TDSON-8-4 |
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The IPG20N10S4L22ATMA1 is a state-of-the-art power semiconductor device and it belongs to the Transistors - FETs, MOSFETs - Arrays category. This device is widely used in various industrial, automotive, and commercial applications. In this article, we will discuss the application field and working principle of IPG20N10S4L22ATMA1.
The IPG20N10S4L22ATMA1 is a four-channel low RDS(on) TRIAC and silicon-controlled rectifier (SCR) array device with three terminal configurations. This device is a highly integrated chip, which can reduce power consumption and space application.
The key application field of IPG20N10S4L22ATMA1 is industrial motor drive controls. Motor drives are designed to reduce the problems of overloading, jams and breakage, as well as provide better control over motor speed. By using IPG20N10S4L22ATMA1, the motor drive circuit can be easily designed to provide better performance. In addition, it can also find application in automotive, automotive electronics, medical devices, and light industrial applications.
The working principle of the IPG20N10S4L22ATMA1 device is based on the principle of static charge control. It utilizes the integrated static control and triac on the same chip to control the current and voltage in the circuit. The control signals are supplied through the gate terminal and the triggering of the device is done through the gate control circuit. The gate control circuit is used to monitor the gate current, which enables the device to turn “ON” or “OFF” according to the required conditions. After triggering, the TRIAC turns “ON” and the SCR turns “OFF”. In this way, the current and voltage control is achieved through the designed circuit.
IPG20N10S4L22ATMA1 is a four-channel low on-resistance TRIAC and silicon-controlled rectifier (SCR) array. This device can provide better control over motor speed, reduce load overloads and jams, and is a highly integrated chip to reduce power consumption and space requirements. The main application field of this device is motor drive controls and automotive, industrial, medical devices and light industrial applications. It is based on the principle of static charge control, and the gate control circuit is used to monitor the gate current and enable device triggering.
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Part Number | Manufacturer | Price | Quantity | Description |
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IPG20N04S408AATMA1 | Infineon Tec... | 0.56 $ | 5000 | MOSFET 2N-CH 8TDSONMosfet... |
IPG20N06S3L-35 | Infineon Tec... | -- | 1000 | MOSFET 2N-CH 55V 20A TDSO... |
IPG20N06S4L14AATMA1 | Infineon Tec... | -- | 1000 | MOSFET 2N-CH 8TDSONMosfet... |
IPG20N06S3L-23 | Infineon Tec... | 0.0 $ | 1000 | MOSFET 2N-CH 55V 20A TDSO... |
IPG20N06S415ATMA1 | Infineon Tec... | -- | 1000 | MOSFET 2N-CH 8TDSONMosfet... |
IPG20N04S4L07AATMA1 | Infineon Tec... | 0.56 $ | 1000 | MOSFET 2N-CH 8TDSONMosfet... |
IPG20N04S412AATMA1 | Infineon Tec... | 0.35 $ | 1000 | MOSFET 2N-CH 8TDSONMosfet... |
IPG20N06S2L35AATMA1 | Infineon Tec... | 0.46 $ | 5000 | MOSFET 2N-CH 8TDSONMosfet... |
IPG20N10S4L35ATMA1 | Infineon Tec... | 0.34 $ | 1000 | MOSFET 2N-CH 8TDSONMosfet... |
IPG20N10S4L22AATMA1 | Infineon Tec... | -- | 1000 | MOSFET 2N-CH 100V 20A TDS... |
IPG20N04S4L11ATMA1 | Infineon Tec... | 0.34 $ | 1000 | MOSFET 2N-CH 8TDSONMosfet... |
IPG20N04S408ATMA1 | Infineon Tec... | -- | 5000 | MOSFET 2N-CH 40V 20A TDSO... |
IPG20N04S4L11AATMA1 | Infineon Tec... | -- | 1000 | MOSFET 2N-CH 8TDSONMosfet... |
IPG20N06S4L11AATMA1 | Infineon Tec... | 0.62 $ | 1000 | MOSFET 2N-CH 8TDSONMosfet... |
IPG20N06S4L26ATMA1 | Infineon Tec... | -- | 10000 | MOSFET 2N-CH 60V 20A TDSO... |
IPG20N06S4L14ATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET 2N-CH 8TDSONMosfet... |
IPG20N06S4L14ATMA2 | Infineon Tec... | 0.46 $ | 1000 | MOSFET 2N-CH 8TDSONMosfet... |
IPG20N06S4L26AATMA1 | Infineon Tec... | -- | 1000 | MOSFET 2N-CH 8TDSONMosfet... |
IPG20N06S2L50ATMA1 | Infineon Tec... | -- | 1000 | MOSFET 2N-CH 55V 20A TDSO... |
IPG20N06S4L11ATMA1 | Infineon Tec... | -- | 1000 | MOSFET 2N-CH 8TDSONMosfet... |
IPG20N04S4L08ATMA1 | Infineon Tec... | 0.46 $ | 5000 | MOSFET 2N-CH 8TDSONMosfet... |
IPG20N06S2L65AATMA1 | Infineon Tec... | -- | 5000 | MOSFET 2N-CH 8TDSONMosfet... |
IPG20N10S436AATMA1 | Infineon Tec... | -- | 1000 | MOSFET 2N-CH 8TDSONMosfet... |
IPG20N04S4L07ATMA1 | Infineon Tec... | -- | 1000 | MOSFET 2N-CH 8TDSONMosfet... |
IPG20N04S412ATMA1 | Infineon Tec... | 0.34 $ | 1000 | MOSFET 2N-CH 8TDSONMosfet... |
IPG20N06S2L50AATMA1 | Infineon Tec... | 0.4 $ | 1000 | MOSFET 2N-CH 8TDSONMosfet... |
IPG20N06S415ATMA2 | Infineon Tec... | 0.51 $ | 1000 | MOSFET 2N-CH 8TDSONMosfet... |
IPG20N10S4L35AATMA1 | Infineon Tec... | -- | 1000 | MOSFET 2N-CH 8TDSONMosfet... |
IPG20N10S4L22ATMA1 | Infineon Tec... | -- | 1000 | MOSFET 2N-CH 8TDSONMosfet... |
IPG20N06S2L35ATMA1 | Infineon Tec... | -- | 1000 | MOSFET 2N-CH 55V 20A TDSO... |
IPG20N04S4L08AATMA1 | Infineon Tec... | 0.42 $ | 1000 | MOSFET 2N-CH 8TDSONMosfet... |
IPG20N06S415AATMA1 | Infineon Tec... | -- | 1000 | MOSFET 2N-CH 8TDSONMosfet... |
IPG20N04S409ATMA1 | Infineon Tec... | 0.41 $ | 1000 | MOSFET N-CHANNEL_30/40V |
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