IPG20N06S4L14ATMA1

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IPG20N06S4L14ATMA1 is a power field effect transistor (FET) array, commonly known as a MOSFET array. It is designed to provide high-performance electrical characteristics that are important for power device applications in power and energy applications. Typical applications for the IPG20N06S4L14ATMA1 include: power semiconductor switching, computer applications, and various industrial and automotive systems.

MOSFET arrays are based on the same principle as individual MOSFETs. This means that they include a control terminal and two power terminals that allow electric current to pass through them. However, instead of the individual controls of a single MOSFET, a MOSFET array provides a single control terminal that controls all MOSFETs in the array. This allows for higher rates of switching of electric current, allowing for greater control over the power flow.

The IPG20N06S4L14AT MA1 power MOSFET array offers excellent on-state performance with an R_DS(ON),max, of 4.14 mΩ & a typical 0.21 mΩ, 20 V, at 10 A, are achieved. It also has low gate-source leakage and a low gate-source capacitance. This enables a high-speed operation for high-efficiency applications.

The power MOSFET array is also designed to keep a low thermal resistance and also ensures excellent thermal resistance performance of the device. The low thermal resistance means that the device does not become overheated when operating for extended periods of time, which is essential for power applications.

The power MOSFET array also features a low gate threshold voltage and a low turn on/off delay time. This makes the device ideal for high-frequency switching applications. It also features a low EMI noise level, meaning that its circuitry reduces noise in applications.

The power MOSFET array also has a high-power dissipation capability with a maximum rating of 203 W dual MOSFET array. This means that the device can handle high current and power, allowing for higher efficiency applications. It also features a high input voltage capability allowing for greater control over the power flow.

The IPG20N06S4L14AT MA1 power MOSFET array is suitable for a wide range of power and energy applications such as power electronic control systems, DC/DC converters, uninterruptible power supplies, and motor drives. It is ideal for applications such as power semiconductor switching, computer applications and various industrial and automotive systems. This MOSFET array is also suitable for use in a wide range of consumer electronics products, such as cell phones, laptops and PDAs.

The IPG20N06S4L14ATMA1 power MOSFET array is a great choice for applications that require high performance, accurate control and efficient power delivery. It is highly reliable, with high performance and power efficiency, making it ideal for use in a wide range of power and energy applications.

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