IPG20N04S4L08ATMA1 Allicdata Electronics

IPG20N04S4L08ATMA1 Discrete Semiconductor Products

Allicdata Part #:

IPG20N04S4L08ATMA1TR-ND

Manufacturer Part#:

IPG20N04S4L08ATMA1

Price: $ 0.46
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET 2N-CH 8TDSON
More Detail: Mosfet Array 2 N-Channel (Dual) 40V 20A 54W Surfac...
DataSheet: IPG20N04S4L08ATMA1 datasheetIPG20N04S4L08ATMA1 Datasheet/PDF
Quantity: 5000
1 +: $ 0.46000
10 +: $ 0.44620
100 +: $ 0.43700
1000 +: $ 0.42780
10000 +: $ 0.41400
Stock 5000Can Ship Immediately
$ 0.46
Specifications
Series: Automotive, AEC-Q101, OptiMOS™
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 22µA
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3050pF @ 25V
Power - Max: 54W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-4
Description

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The IPG20N04S4L08ATMA1 is an array of MOSFETs. It offers design flexibility because it contains two interleaved sets of two gate drive channels, and two separate logic chips. The MOSFETs are optimized for low- power, inverting applications, and each pair of transistors in the device has a common source. This allows the device to offer both high voltage and high power handling capability while also providing users with the ability to independently control both transistors.

The IPG20N04S4L08ATMA1 is ideal for driving high-power and high-frequency applications, such as induction heating, ultra high-power switching, power converter design, and any application requiring high voltage and high power. It is capable of supplying 40 A, and has an operating frequency of up to 5 MHz.

The device also offers a high degree of input/output isolation, which allows for high-speed switching, and protection from overvoltage, undervoltage, and insufficient supply current issues. This high degree of protection makes it suitable for a wide range of applications.

The IPG20N04S4L08ATMA1 is a logic-level, low-side driver. When used with a MOSFET, this device provides a low-side on/off switch. Direction control is delivered by supplying a voltage to the gate of the MOSFET, while switching speed and efficiency are established by current capability and signaling protocol.

The IPG20N04S4L08ATMA1 can be used to implement either single or bidirectional switches. The device features high speed dead-time control which prevents shoot-through currents, reducing losses. The fast switching response time and the low output capacitance of the IPG20N04S4L08ATMA1 make it suitable for high frequency applications.

The IPG20N04S4L08ATMA1 uses a special design that allows the MOSFETs to be driven independently, by connecting the gate of each MOSFET to a separate logic output channel. This makes the device very suitable for applications where two channels must be switched independently, such as in bidirectional power converters.

The IPG20N04S4L08ATMA1 is an advanced, flexible device that offers a wide range of applications and is suitable for a variety of different uses. Its low power use, high current capabilities, and fast switching times make it an ideal choice for a wide range of designs.

The specific data is subject to PDF, and the above content is for reference

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