IPG20N10S436AATMA1

The IPG20N10S436AATMA1 is a field-effect transistor (FET) array containing four N-channel metal-oxide-semiconductor FETs (MOSFETs). This device is extremely versatile and offers excellent performance in a wide variety of applications, from motor control and digital logic to power conversion. In this article, we\'ll take a look at the application field and working principle of the IPG20N10S436AATMA1.

Applications

The IPG20N10S436AATMA1 is a power FET array that features a low on-resistance (R_ON) and fast switching speed, making it ideal for motor control and power conversion applications. It is suitable for high frequency, full-bridge DC-DC or AC-DC topologies, such as LED drivers, dimmers, switching power supplies and DC motor drives. This device can also be used as a high-current switch in charging and discharging circuits, such as battery chargers, E-bike controllers, power conversion, or in audio amplifiers.

Features

The IPG20N10S436AATMA1 features four independent N-channel enhancement-mode MOSFETs in a five-pin package. It has a high continuous drain current of 5.6A (Id), and a low R_ON of 4.36 Ω (RON) at 10 V. Other features include a threshold voltage of 0.8 V and a low R_DS(on) of 3.1 Ω (ID = 5.6A). The device is also fully protected against short circuits, over-voltage, over-temperature, and over-current conditions. As a result, thisFET array provides reliable and robust operation in harsh applications.

Working Principle

As with most FETs, the IPG20N10S436AATMA1 is an electrically-controlled device that utilizes the flow of electrons between the source and drain terminals. The source and drain terminals are connected to both an n-type and p-type semiconductor material, allowing for an electrical current to flow between them. A gate terminal is then used to control the flow of current between the source and drain terminals. To turn the device "on," a voltage source is applied across the gate and source terminals, which causes current to flow between the source and drain.

To turn the device "off," no voltage is applied to the gate, which stops the flow of current between the source and drain terminals. As a result, the IPG20N10S436AATMA1 is able to operate with very low power consumption, making it suitable for battery powered applications. Additionally, the low R_DS(on) and high switching speed allow for fast and efficient power conversion.

Conclusion

The IPG20N10S436AATMA1 is a versatile power FET array that is suitable for a wide range of applications, from motor control to power conversion. It features a low R_ON and fast switching speed, making it ideal for high frequency, full-bridge DC-DC or AC-DC topologies. Additionally, the device is fully protected against over-voltage, over-temperature, and over-current conditions, providing reliable operation in harsh applications.