IPG20N10S4L35ATMA1 Allicdata Electronics

IPG20N10S4L35ATMA1 Discrete Semiconductor Products

Allicdata Part #:

IPG20N10S4L35ATMA1TR-ND

Manufacturer Part#:

IPG20N10S4L35ATMA1

Price: $ 0.34
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET 2N-CH 8TDSON
More Detail: Mosfet Array 2 N-Channel (Dual) 100V 20A 43W Surfa...
DataSheet: IPG20N10S4L35ATMA1 datasheetIPG20N10S4L35ATMA1 Datasheet/PDF
Quantity: 1000
5000 +: $ 0.31104
Stock 1000Can Ship Immediately
$ 0.34
Specifications
Series: Automotive, AEC-Q101, OptiMOS™
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 35 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 16µA
Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1105pF @ 25V
Power - Max: 43W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-4
Description

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IPG20N10S4L35ATMA1 is a customized 3-Channel power MOSFET array module made by Infineon Technologies. This model is accurately designed to meet the demanding power requirements of a wide range of applications. It is widely used in the fields of home appliances, automotive electronics, industrial driving, lighting control and other products that require an efficient power switching solution.

Application Fields:

IPG20N10S4L35ATMA1 is an efficient power switching module widely used in various applications, such as Power Chairs, Emergency Lighting, Inverter Control, Forklift Drives, Robotics Control, Temperature Control, TV Onsets, HVAC Control, Motor Drives, Automotive Battery Power Switches, Self-Exciting Switching Power Supplies, Automotive Control Systems, UPS Systems and many others.

Working Principle:

This module is based on a power MOSFET array that consists of three independent non-polar N-Channel MOSFETs. These three MOSFETs are connected in a parallel configuration and operate by reducing the on-resistance of the parasitic diodes. This type of array provides a much larger current switching capacity than a single transistor, enabling it to meet the power requirements of many demanding applications. The drain to source voltage rating is 20V and the drain current rating is 35A. It is capable of switching up to a maximum of 140A.

In addition, this module implements a charge pump function to enhance the reverse transfer capability of the output of the main switch relay. It is also equipped with a high-side temperature sensing capability for thermal protection, which will shut down the output of the system if the temperature exceeds a certain threshold. This module also includes an ESD protection circuit to prevent damage from electrostatic discharge.

The main advantage of using this module is that it allows for a much more efficient power switching solution for power electronics applications. The circuit design makes it capable of handling a wide range of power requirements that would otherwise not be possible with a single power transistor. Furthermore, it is designed to work with a wide range of loads and produces minimal heat during operation, making it an ideal choice for applications where power consumption needs to be kept low.

In conclusion, the IPG20N10S4L35ATMA1 is a highly reliable power MOSFET array module that is ideally suited for a wide range of power switching applications. Its high current switching capacity and low power consumption make it an ideal choice for power electronics applications that require efficient power switching solutions.

The specific data is subject to PDF, and the above content is for reference

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