IPG20N06S3L-23

Vgs(th) (Max) @ Id:	2.2V @ 20µA
Base Part Number:	*PG20N06
Supplier Device Package:	PG-TDSON-8-4
Package / Case:	8-PowerVDFN
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power - Max:	45W
Input Capacitance (Ciss) (Max) @ Vds:	2950pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:	42nC @ 10V
Series:	OptiMOS™
Rds On (Max) @ Id, Vgs:	23 mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C:	20A
Drain to Source Voltage (Vdss):	55V
FET Feature:	Logic Level Gate
FET Type:	2 N-Channel (Dual)
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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Introduction

IPG20N06S3L-23 is an array of ultra high frequency enhancement-mode field-effect transistors (FETs), typically intended for use in high power, high frequency, and/or high efficiency circuits. This type of device can be considered to be a miniature version of a MOSFET, allowing a multitude of applications that are more versatile than those available when using a standard MOSFET. This consistent reduction in size, coupled with a wide array of features and specifications, makes the IPG20N06S3L-23 particularly suitable for a variety of applications.

Applications

The IPG20N06S3L-23 is versatile enough to be used in a wide range of applications. It can be used for DC to DC converter applications, high frequency switching applications, and other high power applications. They are typically deployed in telecommunications, defense, and automotive applications, but can be employed in any application that requires high performance and reliability.

Features & Specifications

The IPG20N06S3L-23 boasts impressive electrical and mechanical specifications. For example, the maximum drain current is 24A and the on-state resistance is 1.2mΩ. The current-gain bandwidth is 3GHz and the maximum power dissipation is 85W. There are also features such as the integrated E-shield for improved on-resistance, and an integrated thermal management system for improved reliability. The IPG20N06S3L-23 employs a suite of packaging technologies that optimize switching speeds and minimize inductance.

Working Principle

The working principle behind the IPG20N06S3L-23 is simple. The device consists of a Gate, Drain, and Source terminal. When a potential difference is applied between the Drain and Source over a certain period of time, it creates a field in the Gate and the Drain terminal. This field switches the voltage between the two, resulting in current flow through the Drain terminal. The Gate voltage, which can be increased or decreased, is used to adjust the amount of current that is allowed to pass through the device.

Conclusion

The array of FETs provided by the IPG20N06S3L-23 is extremely versatile, with features and specifications that can be tailored to a wide range of applications. It has impressive electrical and mechanical specifications, and a suite of packaging technologies for enhanced performance. Furthermore, its simple yet highly effective working principle makes it ideal for high power, high frequency, and high efficiency circuits.

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