Allicdata Part #: | IPG20N04S412ATMA1-ND |
Manufacturer Part#: |
IPG20N04S412ATMA1 |
Price: | $ 0.34 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET 2N-CH 8TDSON |
More Detail: | Mosfet Array 2 N-Channel (Dual) 40V 20A 41W Surfac... |
DataSheet: | IPG20N04S412ATMA1 Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.30411 |
Series: | Automotive, AEC-Q101, OptiMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 20A |
Rds On (Max) @ Id, Vgs: | 12.2 mOhm @ 17A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 15µA |
Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 1470pF @ 25V |
Power - Max: | 41W |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | PG-TDSON-8-4 |
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The IPG20N04S412ATMA1 is a MOSFET array composed of four N-channel enhancement mode transistors with a unique interconnect structure that makes connection and routing during prototyping easier. Due to its integrated low on-state resistance (RDS(on)), and extremely small size, it is a popular device for power management in battery-driven applications.
This MOSFET array is often found in high-current switching and motor control circuits. It is also widely used in low dropout (LDO) regulators, which are commonly used to provide a regulated voltage output from an unregulated power supply. Additionally, it is useful in H-bridge DC motor controls, as a stepped attenuator, and in analog switch applications.
Working Principle
The MOSFET array is designed to emulate the behavior of a single FET transfer curve over a range of gate-source voltage (VGS) changes. By using this transfer curve, the MOSFET array can be used to control the current flow through a load. Its four MOSFETs are arranged with their sources connected in series, with their gates connected in parallel, and their drains connected in series.
As the VGS is increased, the stored charge carriers are enabled to flow from the source to the drain, thereby allowing current to flow through the load. When the VGS is decreased, the stored charge carriers are no longer allowed to flow and the current is cut-off. By controlling the VGS, the array can be used to control the current flow and serve as a power switch in various applications.
Applications
Thanks to its low RDS(on) and small size, the IPG20N04S412ATMA1 MOSFET array is perfect for applications that require high-current switching and motor control. It is widely used in low dropout (LDO) regulators to provide a regulated voltage output from an unregulated power supply, as well as in H-bridge DC motor controls and stepped attenuator applications. Additionally, this device is great for analog switch applications, due to its low power consumption and fast switching characteristics.
Another common application for this MOSFET array is in battery-powered applications, as it is capable of delivering power efficiently and reliably. It is also quite versatile, as it can be used for various applications, such as charging circuits, high powered LED lighting, and various industrial equipment.
Overall, the IPG20N04S412ATMA1 MOSFET array is a great device for power management and motor control applications. Its low on-state resistance, small size, and versatility make it an ideal choice for various applications.
The specific data is subject to PDF, and the above content is for reference
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