IPG20N04S4L11AATMA1 Discrete Semiconductor Products

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IPG20N04S4L11AATMA1 is a MOSFET Array currently being offered by Vishay Semiconductor. It is a pair of N-channel enhancement-mode insulated gate transistors with integrated high side zener diodes. This device also features integrated ESD protection, an integrated circuit breaker, and an integrated OCP module. As a result, its design is optimal for use in applications such as motor control, load switching, and load sensing.

Let’s have a look at the workings of the IPG20N04S4L11AATMA1 MOSFET array. In essence, this device has two N-channel enhancement mode insulated gate transistors (MOSFETs) each with their separate gate and drain terminals. The device’s integrated circuitry includes high side zener diodes for protection against overvoltage, ESD protection for protection against electrostatic discharge, and an OCP module for protection against over current.

Using the integrated zener diodes, the device can be used in motor control applications where the voltage needs to stay within safe operating limits. The ESD protection ensures that it is immune to the destructive electric field created by electrostatic discharge events, whereas the integrated OCP module is vital for applications involving load sensing or load switching where an overcurrent condition should be quickly detected and handled properly.

In summary, IPG20N04S4L11AATMA1 is an ideal solution for use in applications such as motor control, load switching, and load sensing. It has integrated high side zener diodes and ESD protection, allowing it to withstand overvoltage and electrostatic discharge events. Moreover, its integrated OCP module ensures that it can detect and respond properly to an overcurrent event and protect the system from damage or destruction.

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