IPP020N08N5AKSA1

Vgs(th) (Max) @ Id:	3.8V @ 280µA
Package / Case:	TO-220-3
Supplier Device Package:	PG-TO-220-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	375W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	16900pF @ 40V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	223nC @ 10V
Series:	OptiMOS™
Rds On (Max) @ Id, Vgs:	2 mOhm @ 100A, 10V
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Current - Continuous Drain (Id) @ 25°C:	120A (Tc)
Drain to Source Voltage (Vdss):	80V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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Introduction:

IPP020N08N5AKSA1 is a n-channel field effect transistor (FET) device manufactured by Infineon Technologies. It is design for low logic level low-voltage, low current and low noise applications. The device has best-in-class ESD performance, which makes it suitable for use in consumer digital products. Additionally, the device is designed to provide excellent thermal stability and a high current handling capability in a small package size.

Functions and Characteristics:

IPP020N08N5AKSA1 has an advanced design that delivers high performance in consumer digital products. It has high speed switching characteristics and high noise immunity, making it ideal for applications where high speed switching and noise immunity are required. Additionally, it features low on-resistance and wide operating temperature range, making it suitable for a variety of applications. Compared to other FETs, the device has superior ESD performance, making it highly reliable in harsh operating environments.

Application Field:

IPP020N08N5AKSA1 is designed for use in consumer digital products, such as audio players, camcorders, digital cameras, and cell phones. The device is also used in a number of other applications, such as power management and motor control. The device has low gate capacitance, which makes it ideal for high frequency switching applications, such as switching power supplies and motor control. Additionally, the device is highly reliable in harsh operating environments, making it suitable for applications where reliability is a priority.

Working Principle:

The working principle of IPP020N08N5AKSA1 is based on the basic principles of operation of a FET. It consists of a semiconductor channel with two terminals, the source and the drain. The gate terminal is separated from the channel by a thin oxide layer, which acts as an insulator. When a voltage is applied between the gate and source terminals, a semiconductor channel is created, allowing current to flow from the source to the drain. The channel width is determined by the quantity of voltage applied to the gate terminal.

The device has a high input impedance, which makes it ideal for use in low level logic applications. This is because the resistance between the gate and source terminals is relatively high, which means that less current is required to achieve a certain level of voltage. Additionally, the device has excellent noise immunity, which makes it suitable for use in applications where there is potential for unwanted noise to interfere with the performance of the device.Conclusion:

IPP020N08N5AKSA1 is a n-channel field effect transistor manufactured by Infineon Technologies. It has low on-resistance and wide operating temperature range, making it suitable for a variety of applications. Additionally, the device has high speed switching characteristics, high noise immunity and a high current handling capability for low level logic applications. The device also has excellent ESD performance, making it ideal for use in harsh operating environments. The device is designed for use in consumer digital products and also finds applications in power management and motor control applications.

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